No abstract

No abstract

In this work, we report on a thorough study of charge loss in embedded Non Volatile Memories. We focused on the fast initial threshold voltage (Vth) shift, which occurs during the first minutes of data retention bake. Experiments were performed to have a better understanding of this phenomenon. As a result, we can predict the Vth shift of a cell baked at 250°C and evaluate its impact on product reliability. This is the first time that this reliability aspect is characterized with such a level of accuracy. Based on these observations, a physical model is proposed to describe the fast initial threshold voltage shift.

No abstract

No abstract

No abstract

A novel Flash endurance characterization approach is presented, allowing delay-free READ operations and thus a realistic electrostatic description at each cycle before any device relaxation. Systematic measurement of time-dependent drain current during Hot Carrier programming is shown to provide an extended description of Flash programming dynamics with a 5ns time resolution, including tunnel oxide transport.

International audienc