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The dependence of the optical absorption spectrum of a semiconductor quantum well on two-dimensional electron concentration n(e) is studied using CdTe samples. The trion peak (X-) seen at low n(e) evolves smoothly into the Fermi edge singularity at high n(e). The exciton peak (X) moves off to high energy, weakens, and disappears. The X,X- splitting is linear in n(e) and closely equal to the Fermi energy plus the trion binding energy. For Cd0.998Mn0.002Te quantum wells in a magnetic field, the X,X- splitting reflects unequal Fermi energies for M = +/-1/2 electrons. The data are explained by Hawrylak's theory of the many-body optical response including spin effects.

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This paper presents a theoretical framework about interface state creation rate from Si–H bonds at the Si∕SiO2 interface. It includes three main ways of bond breaking. In the first case, the bond can be broken, thanks to the bond ground state rising with an electrical field. In two other cases, incident carriers will play the main role either if there are very energetic or very numerous but less energetic. This concept allows one to physically model the reliability of metal oxide semiconductor field effect transistors, and particularly negative bias temperature instability permanent part, and channel hot carrier to cold carrier damage.

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