A novel Flash endurance characterization approach is presented, allowing delay-free READ operations and thus a realistic electrostatic description at each cycle before any device relaxation. Systematic measurement of time-dependent drain current during Hot Carrier programming is shown to provide an extended description of Flash programming dynamics with a 5ns time resolution, including tunnel oxide transport.
A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided
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