Temperature sense effect in HCI self-heating de convolution: Application to 28nm FDSOI

Federspiel, X.; Torrente, Giulio; Arfaoui, W.; Cacho, F.; Huard, V.

doi:10.1109/irps.2016.7574651

Cited by 8 publications

(2 citation statements)

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“…Jin et al [3], Liu et al [18] and Rahman et al [2] reported that SH accelerates HCD in p-channel FinFETs very strongly, while this impact is weak in n-channel devices [3]. On the other hand, Federspiel et al [19] published a negative temperature dependence of HCD in their n-channel confined transistors with SH, therefore, weakening HCD. Finally, Prasad et al [20] discussed that there is no unambiguous picture concerning the impact of SH on HCD and the net effect is determined by a device architecture and stress conditions.…”

Section: Introductionmentioning

confidence: 99%

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors

Tyaginov

Makarov²,

El-Sayed

et al. 2022

2022 IEEE International Reliability Physics Symposium (IRPS)

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We extend our framework for hot-carrier degradation (HCD) modeling by covering the impact of self-heating (SH) on HCD. This impact is threefold: (i) perturbation of carrier transport, (ii) acceleration of the thermal contribution to the Si-H bond breakage process, and (iii) and shortening vibrational lifetime of the bond resulting in reducing the multiple-carrier mechanism rate. We validate the framework against HCD data acquired on n-channel fin field-effect-transistors (FETs) and pchannel nanowire (NW) FETs under various stress conditions and analyze the importance of each of the aforementioned components of the SH impact on HCD. This analysis shows that in n-channel devices SH depopulates the high energetical fraction of the carrier distribution, while in p-channel transistors SH slightly shifts the carrier energy distribution towards higher energy. Thus, in nFinFETs the impact of SH on the carrier transport and enhancement of the thermal component of bond rupture compensate each other (vibrational lifetime shortening has a weak impact on HCD), thereby leading to slight inhibition of HCD by SH. To the contrary, in pNWFETs these two factors both enhance HCD (while the contribution of the vibrational lifetime dependence on temperature is again small) and thus SH accelerates HCD. Our modeling framework, therefore, can explain why in n-channel FETs SH slightly inhibits HCD, while in p-channel devices HCD is accelerated by SH.

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Section: Introductionmentioning

confidence: 99%

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors

Tyaginov

Makarov²,

El-Sayed

et al. 2022

2022 IEEE International Reliability Physics Symposium (IRPS)

View full text Add to dashboard Cite

show abstract

“…As a consequence, there is no unambiguous picture regarding the impact of SH on HCD [23]. For example, different groups reported that in n-channel transistors SH either has a weak impact on HCD [24,25] or inhibits it [26]. As for pchannel transistors, the consensus seems to be reached and several groups report that SH accelerates HCD in pFETs [23,25,27].…”

Section: Introductionmentioning

confidence: 99%