Ferroelectrics have been demonstrated as excellent building blocks for highperformance nonvolatile memories, including memristors, which play critical roles in the hardware implementation of artificial synapses and in-memory computing. Here, it is reported that the emerging van der Waals ferroelectric α-In 2 Se 3 can be used to successfully implement heterosynaptic plasticity (a fundamental but rarely emulated synaptic form) and achieve a resistanceswitching ratio of heterosynaptic memristors above 10 3 , which is two orders of magnitude larger than that in other similar devices. The polarization change of ferroelectric α-In 2 Se 3 channel is responsible for the resistance switching at various paired terminals. The third terminal of α-In 2 Se 3 memristors exhibits nonvolatile control over channel current at a picoampere level, endowing the devices with picojoule read-energy consumption to emulate the associative heterosynaptic learning. The simulation proves that both supervised and unsupervised learning manners can be implemented in α-In 2 Se 3 neutral networks with high image recognition accuracy. Moreover, these heterosynaptic devices can naturally realize Boolean logic without an additional circuit component. The results suggest that van der Waals ferroelectrics hold great potential for applications in complex, energy-efficient, brain-inspired computing systems and logic-in-memory computers.

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during the measurement. To obtain the degradation-free gm, pulsed Id-Vg with a transition time of 6 gs must be used. Lifetime of pMOSFETs is limited by negative bias Fig. 3 also shows that gm actually increases with time temperature instability (NBTI). For the first time, we show under a constant Vgst. This is caused by a reduction of lVgstthat the NBTI-induced threshold voltage shift, AVth, Vthl, which enhances the effective mobility, despite the measured in early works by using either the 'on-the-fly' or the degradation of low-field mobility. A more detailed analysis conventional transfer characteristics extrapolation techniques on the variation of effective mobility during stress was given is not the real AVth under practical operation. A new method in our recent work [7]. After using the degradation-free Id and is proposed for estimating the real AVth.gm, Fig. 4 shows that the AVth(OTF) is more than doubled.However, we will demonstrate that AVth(OTF) is not

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As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial SourceMeasure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable.

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