2016 IEEE International Reliability Physics Symposium (IRPS) 2016
DOI: 10.1109/irps.2016.7574546
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Hot carrier stress: Aging modeling and analysis of defect location

Giulio Torrente1,
X. Federspiel2,
D. Rideau3
et al.
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Cited by 3 publications
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Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with I<inf>d</inf>-V<inf>d</inf> characteristics

Wang
1
,
Southwick
2
,
Cheng
3
et al. 2018
2018 IEEE International Reliability Physics Symposium (IRPS)
7
1
5
0
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Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with I<inf>d</inf>-V<inf>d</inf> characteristics

Wang
1
,
Southwick
2
,
Cheng
3
et al. 2018
2018 IEEE International Reliability Physics Symposium (IRPS)
7
1
5
0
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Investigation on the Lateral Trap Distributions in Nanoscale MOSFETs During Hot Carrier Stress

Sun
1
,
Yu
2
,
Zhang
3
et al. 2019
IEEE Electron Device Lett.
23
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Microscopic Analysis of Erase-Induced Degradation in 40 nm NOR Flash Technology

Torrente
1
,
Coignus
2
,
Vernhet
3
et al. 2016
IEEE Trans. Device Mater. Relib.
5
2
1
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