Effect of passivation annealing on the electromigration properties of hybrid bonding stack

Jourdon, J.; Moreau, S.; Bouchu, D.; Lhostis, S.; Bresson, N.; Guiheux, Denis; Beneyton, R.; Renard, S.; Frémont, Hélène

doi:10.1109/irps.2017.7936378

Cited by 2 publications

(1 citation statement)

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“…These results are completed by those published by Jourdon in 2017. 50 Jourdon studies the impact of the passivation-annealing step on the EM performance. This annealing is used in addition to the bonding annealing to improve the dark current of CMOS image sensors.…”

Section: Aging Results For the Last 6 Yearsmentioning

confidence: 99%

Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements

Moreau

Jourdon

Lhostis

et al. 2022

ECS J. Solid State Sci. Technol.

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This paper reviews the most significant qualification and reliability achievements obtained, over the last 6 years, by the scientific community for hybrid bonding-based interconnects (HB) also called Cu-Cu or Cu/SiO2 bonding. First, the definition of words qualification, robustness and reliability are given to avoid misunderstanding about the published results. Second, the five potential threats (moisture ingress, thermomechanical stresses,electromigration, Cu diffusion, dielectric breakdown) are presented. Finally, the publications of six industrials or research and technology organizations are summarized and discussed. Most of the published data are related to qualification results (pass or fail). Few studies published in-depth studies, mainly on electromigration (Black’s parameters extraction and failure analysis) and copper diffusion (electrical and analytical characterizations). To conclude, once the manufacturing issues (surface preparation, alignment…) have been solved, this technology is robust and reliable at pitches > 1 μm as it reacts, roughly, like a conventional back-end of line (BEoL) interconnect.

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Section: Aging Results For the Last 6 Yearsmentioning

confidence: 99%