Automated Applications of Acoustics for Stored Product Insect Detection, Monitoring, and Management

Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (<= 200 V/W) and noise equivalent power (>= 10(-10) W/Hz(0.5)) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation. (c) 2006 American Institute of Physics

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28nm FDSOI technology platform for high-speed low-voltage digital applications

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High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

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Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

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Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

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Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO<inf>2</inf> gate stack

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Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm² 6T-SRAM bitcell

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C. Fenouillet-Béranger

Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

28nm FDSOI technology platform for high-speed low-voltage digital applications

High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors

Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO<inf>2</inf> gate stack

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm² 6T-SRAM bitcell

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C. Fenouillet-Béranger

Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

28nm FDSOI technology platform for high-speed low-voltage digital applications

High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors

Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO<inf>2</inf> gate stack

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm2 6T-SRAM bitcell

Contact Info

Product

Resources

About

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm² 6T-SRAM bitcell