No abstract

No abstract

No abstract

A vapor phase based silylation process was used to restore plasma damaged porous ultra low-κ SiOCH dielectric films. The process was carried out with 11 different silylation agents. After the processing of blanked wafers, the restoration performance was analyzed by different analytic techniques such as Fourier infrared and Auger electron spectroscopy as well as contact angle, ellipsometric porosimetry, and mercury probe measurements. Quantum mechanic calculations and practical results suggest three repair chemicals having two reactive groups to be most promising. However, a comparable electrical improvement, i.e., κ-value improvement, was achieved with chemicals having one reactive group. The removal of water during the high temperature silylation process is suggested to be the main contributor to the κ-value improvement. The recovery of the surface free energy inhibits or retards water from returning after the silylation process. The chemicals with two reactive groups providing the highest degree of silylation are found to be most appropriate for ultra low-κ dielectric (ULK) recovery. But, depending on the requirement for ULK restoration (e.g., κ-value, surface recovery, etc.), chemicals having one reactive group can be sufficient as well.

I. AbstractA high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization techniques are utilized to enhance transistor speed. Advanced-low-K BEOL for this technology features 10 wiring levels with a novel K=2.75 film in selected levels. This film is a SiCOH-based dielectric optimized for stress to enable integration for enhanced performance. The resulting technology delivers pFET and nFET AC switching on-current of 735 µA/um and 1259 µA/um respectively, at an off-current of 200 nA/um (V dd =1.0 V), and 6% reduction in interconnect delay. Process yield is demonstrated on a SRAM cell with size of 0.65 µm 2 . II. Technology DescriptionThe major ground rules used in this technology are equivalent to our 65-nm-baseline technology which utilizes DSL for enhanced performance [1]. DSL is a process integration flow that combines tensile and compressive stress silicon nitride liners on nFET and pFET devices respectively, resulting in increased channel strain and performance for both. Fig. 1 shows our baseline flow with additional enhanced strain process steps. Specifically, the embedded SiGe process is implemented with epitaxial SiGe growth in cavities etched into the source/drain areas of the pFETs. The nFETs are covered with a nitride hardmask during recess etch and epitaxial growth of SiGe in the pFET areas. Photolithography is utilized to mask the nFET areas while the hardmask is etched into a spacer in the pFET areas. This spacer defines the proximity of the SiGe to the channel area and prevents SiGe growth on the pFET polysilicon gate electrode. A stress memorization technique (SMT) is implemented for the nFETs where increased tensile strain was achieved by the deposition of a stress dielectric film and subsequent thermal anneal.The remaining process flow steps are equivalent to our baseline CMOS process, except for a modified Ni silicide process that achieves improved contact and stability on SiGe. This is followed by DSL implementation in the middle-of-line (MOL) [2]. A cross-sectional TEM image of a completed device is shown in Fig. 2, also shown is an AFM image of the surface morphology of the source/drain area of the pFET demonstrating a smooth RMS roughness value of 0.11 nm. The advanced-low-K dielectric film used in the BEOL interconnect levels is based on the K=2.75 material previously discussed [3]. This film has been optimized for lower permittivity (K=2.75) and stress. Extendibility of the film into both 2x and 4x fatwire levels has been demonstrated. III. FEOL Performance ResultsA plot of the Ion-Ioff characteristics is shown in Fig. 3 along with the transistor characteristics in Fig. 4 at 1.0 V Vdd, where the threshold voltage roll-off is well-behaved down to 30 nm gate length, and sub-threshold swing is maintained at ~110 mV/dec (Fig. 5-6). pFET AC switching on-current of 735 µA/µm at off-current of 200 nA/µm with a corresponding DC on-current of 700 µA/µm was achieved. For the nFET, the AC switching on-current was 1259 µA/µm and the DC on-cur...

No abstract

Ultralow k using a plasma enhanced chemical vapor deposition porogen approach: Matrix structure and porogen loading influences

No abstract