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NBTI and PBTI are studied in IL/HK/MG gate stacks having EOT down to ∼ 6Å and fabricated using low T RTP based thermal IL and a novel IL/HK integration. At equivalent EOT, proposed stacks provide improved NBTI and similar PBTI when compared to conventional Chem-Ox IL based HKMG stacks. EOT scaling achieved by RTP thermal IL scaling shows lower rate of increase in NBTI and PBTI when compared to Chem-Ox IL scavenged stacks. Impact of Nitrogen and role of post HK nitridation are studied. Physical mechanism of improved BTI in proposed stacks is discussed in detail.

The base current in modem bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.