Bounding the total-dose response of modern bipolar transistors

Kosier, S.L.; Combs, W.E.; Wei, A.; Schrimpf, R.D.; Fleetwood, D.M.; DeLaus, M.; Pease, R.L.

doi:10.1109/23.340518

Cited by 77 publications

(23 citation statements)

References 13 publications

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“…It is seen that the slope (,I B /,V BE ) for V BE values less than 0.6 V lies between 1 and 2 and it approaches 2 for V BE > 0.6 V. Two distinct regions of ideality factors have been observed previously in many C-ray irradiated transistors of the same family by other workers. It is established that for npn transistors, an ideality factor between 1 and 2 signifies the surface recombination and an ideality factor of 2 indicates recombination peak is beneath the surface [8][9][10][11][12]. It is well known in the literature that vertical npn transistors exhibit significant gain degradation mainly by displacement damage, when exposed to ionizing radiation.…”

Section: Resultsmentioning

confidence: 99%

60Co γ-ray induced gain degradation in bipolar junction transistors

Kulkami

Damle

2011

Indian J Phys

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: Commercial indigenously made npn and pnp bipolar junction switching transistors used for space applications are investigated for 60 Co C-ray induced effects. The on-line as well as off-line measurements indicate that the forward current gain of the transistors decreases significantly as the accumulated dose increases. Excess base current model is employed to account for the current gain degradation. The pnp transistor undergoes as much degradation as the npn type. It is found that bulk degradation by displacement damage is the dominant mechanism leading to reduction in forward current gain of npn transistors. On the other hand it appears that, in addition to bulk damage, surface degradation due to accumulation of interface states at the silicon-silicon dioxide interface also contributes significantly to gain degradation in pnp transistor as evident from thermal annealing studies. Further, estimation reveals that the transistor with larger base width has higher displacement damage factor.

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Section: Resultsmentioning

confidence: 99%

60Co γ-ray induced gain degradation in bipolar junction transistors

Kulkami

Damle

2011

Indian J Phys

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“…This increased recombination in the neutral base leads to an increase in the base current, which in turn results in a decrease in the collector current. When recombination centers are generated in the base region of the transistor, it leads to an increase in the base current by decreasing the minority carrier lifetime (13,14). A decrease in Figure 3.…”

Section: I-v Measurementsmentioning

confidence: 95%

I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

Madhu

Kulkarni²,

Ravindra

et al. 2008

Radiation Effects and Defects in Solids

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A commercial bipolar junction transistor (2N 2219A, npn) irradiated with 84 MeV O 6+ -ions with fluence of the order of 10 13 ions cm −2 is studied for radiation-induced gain degradation and deep-level defects or recombination centers. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep-level transient spectroscopy. Minority carrier trap energy levels with energies ranging from E C −0.17 eV to E C −0.55 eV are observed in the base-collector junction of the transistor. Majority carrier defect levels are also observed with energies ranging from E V +0.26 eV to E V +0.44 eV. The irradiated device is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250 • C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for an increase in base current through Shockley-Read-Hall or multi-phonon recombination and consequent transistor gain degradation.

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“…Net positive charge in the oxide that overlies the base of an NPN bipolar transistor [22,25] or a lightly doped emitter of a PNP transistor [26] increases the carrier surface recombination rate and decreases the device gain. The same effect results from interface-trap generation along the surface of the active base of either device type [22,. At low dose rates, the gain degradation of bipolar transistors can be up to 5-10 times worse than that observed at higher rates [29-311, with greater gain degradation typically observed at lower total doses for lateral and substrate PNP transistors than for NPN or vertical PNP transistors [25-321. Fig.…”

Section: Bipolar Radiation Responsementioning

confidence: 99%

“…Figure 3 is a schematic illustration of the primary ionizing radiation effects in linear bipolar devices. The damage to the device is a consequence of the low-quality oxide that often overlies the emitter-base junction in a linear bipolar IC [21,22]. If there were high electric fields (like those in MOS gate or field oxides) across these insulators, these linear bipolar devices would fail at low total doses at any radiation dose rate [21,23].…”

Section: Bipolar Radiation Responsementioning

confidence: 99%

“…At such low electric fields, the base oxide is subject to space-charge effects that can alter the transport of radiationinduced positive charge, leading to less net oxide-trap charge near the base-emitter junction and fewer interface traps at the surface of the active base [23,24]. Net positive charge in the oxide that overlies the base of an NPN bipolar transistor [22,25] or a lightly doped emitter of a PNP transistor [26] increases the carrier surface recombination rate and decreases the device gain. The same effect results from interface-trap generation along the surface of the active base of either device type [22,.…”

Section: Bipolar Radiation Responsementioning

confidence: 99%

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Total ionizing dose effects on MOS and bipolar devices in the natural space radiation environment

Fleetwood¹

1998

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Mechanisms that control the response of MOS and bipolar devices to ionizing ra-0 8 rl diation in the natural space environment are briefly reviewed. Standard tests based on room-temperature irradiation and elevated temperature annealing are described for MOS devices to bound the effects of oxide and interface-trap charge in space. For bipolar devices that exhibit enhanced low-dose-rate sensitivity, a standard test equivalent to that developed for MOS devices is not available. However, screening techniques based on room temperature andor elevated temperature irradiations are described which can minimize the risk to spacecraft and satellite electronics fiom this phenomenon.

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Bounding the total-dose response of modern bipolar transistors

Abstract: The base current in modem bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.

Cited by 77 publications

References 13 publications

60Co γ-ray induced gain degradation in bipolar junction transistors

60Co γ-ray induced gain degradation in bipolar junction transistors

I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

Total ionizing dose effects on MOS and bipolar devices in the natural space radiation environment

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