Analysis of the impact of different additives during etch processes of dense and porous low-k with OES and QMS

Zimmermann, Sven; Ahner, Nicole; Blaschta, F.; Schaller, Μ.; Rülke, H.; Schulz, Stefan E.; Geßner, Thomas

doi:10.1016/j.mee.2009.08.004

Cited by 18 publications

(12 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The emission lines at 602 nm correspond to H 2 , which resulted from the recombination reaction of active species in plasma space [14]. The peak recorded at 516 nm ascribed to C 2 * [19]. The emission lines of CH species (CH + at 422 nm and CH at 431 nm) come from the dissociation products of CH x [8,14,20].…”

Section: Oes Resultsmentioning

confidence: 99%

“…Hydrogen-rich plasma (high H and H 2 signal intensity) found at high ω p is also partly be a consequence of a intensified ion bombardment (i.e. etching reactions or dehydrogenation reactions occurring on the growing film) [14,18,19]. Finally, hydrogen-rich and polymer-like films can be grown at lower ω p , as opposed to those dehydrogenated films with less-organic characteristics at higher ω p [14].…”

Section: Qms Resultsmentioning

confidence: 99%

“…9). Based on the aforementioned findings, it is not surprising that they all exhibited hydrophobicity (water contact angle ranging from 98.5°to 121.1°), because CH and H as the most reactive species in plasma space contributed to the hydrophobic characteristic of the deposited films [16,19]. The most hydrophobic deposit was obtained at high f p and low ω p , which can be attributed to the greater amount of CH x components [16].…”

Section: Film Characterizationmentioning

confidence: 99%

See 2 more Smart Citations

Plasma diagnostics for pulsed-dc plasma-polymerizing para-xylene using QMS and OES

Chou

Chuang

Lin

et al. 2011

Surface and Coatings Technology

View full text Add to dashboard Cite

Section: Oes Resultsmentioning

confidence: 99%

Section: Qms Resultsmentioning

confidence: 99%

Section: Film Characterizationmentioning

confidence: 99%

See 1 more Smart Citation

Plasma diagnostics for pulsed-dc plasma-polymerizing para-xylene using QMS and OES

Chou

Chuang

Lin

et al. 2011

Surface and Coatings Technology

View full text Add to dashboard Cite

“…The interpretation of the peaks in the measured spectra will be executed normally by the usage of customary databases, in which an overview of possible species in the plasma is still necessary. Typical OES and QMS spectra for the etch processes of porous SiCOH in CF 4 ‐based plasmas, with comprehensive interpretation of measured spectra lines, are reported by Zimmermann et al The high coincidence of different species emission lines using the OES method and the additional fragmentation of larger molecules in the ion source of a QMS make the direct comparison between OES or QMS results and conditions at the wafer surfaces nearly impossible. A usable combinatorial approach is described in detail by Zimmermann et al and is based on the Pearson correlation coefficient.…”

Section: Plasma Diagnostic Methods To Overcome These Problemsmentioning

confidence: 99%

The role of plasma analytics in leading‐edge semiconductor technologies

Zimmermann

Haase

Lang

et al. 2018

Contributions to Plasma Physics

Self Cite

View full text Add to dashboard Cite

Plasma patterning processes play a key role in modern Ultra Large Scale Integration (ULSI) device fabrication. With further scaling of device dimensions, plasma process characteristics become more and more the limiting factor in pattern minimization, not least due to parasitic effects caused by different plasma properties. Such effects are geometrical deviations in the etch profiles, the loss of critical dimensions, the undercut as well as the most critical sidewall damage while etching trenches and vias to fabricate the circuit contact and metallization system. Especially for modern dielectric materials on the base of carbon‐doped silica these drawbacks are much pronounced and worsen performance and power consumption of microelectronic devices. Finally, the charge damage of thin gate oxides during plasma processing results in reduced reliability and functionality of microelectronic devices. The complex interactions between conditions in the plasma bulk and the impacts on the wafer surface are not yet understood completely. With respect to the increasing complexity of modern semiconductor plasma etch equipment, the optimization of patterning processes using the empirical method becomes more and more impossible. This paper overviews typical challenges during plasma patterning processes in 28 nm and 22 nm technology nodes by means of today's Back‐End of Line integration schemes. Different plasma diagnostic methods provide an insight into the physical and chemical conditions of different etch chambers and their influence on process results and damaging behaviour.

show abstract

“…Aside from etch and damage mechanisms, accelerated ions and hot radicals are able to sputter the SiCOH material. The capability of argon, added to the parent gas, to enhance the sputter effect is detailed discussed in [5]. Furthermore fluorocarbon plasmas show a polymerization inside the plasma on both, the reactor walls and the sample surfaces.…”

Section: ) Patterning Of Ultra Low-k Films Using Reactive Ion Etchingmentioning

confidence: 99%

A Less Damaging Patterning Regime for a Successful Integration of Ultra Low-k Materials in Modern Nanoelectronic Devices

et al. 2011

View full text Add to dashboard Cite

This paper describes a three-step process regime for the integration of porous SiCOH based ultra low-k materials in existing copper damascene technologies. During the work with these complex and sensitive materials, it became more and more clear, that a successful patterning depends not only on the etch step but also on the adjustment between the etch and the following cleaning and k-restore processes. The presented process regime starts with a reactive ion etch process for trench patterning followed by a post etch clean to remove etch residues. Finally a k-restore process was performed to repair the damaged regions in the trench sidewalls. In this work it became clear, that the etch chemistry influences not only the results of the etch process ostensibly sidewall damage but also kind and effect of the post etch clean. Each plasma composition results in the necessity of a customized post etch cleaning solution. Finally a krestore process using Hexamethyldisilazane (HMDS) as restore chemical was demonstrated successfully. Enhanced temperatures and an additional UV-treatment are possibilities to promote the restore effect.

show abstract

Analysis of the impact of different additives during etch processes of dense and porous low-k with OES and QMS

Cited by 18 publications

References 10 publications

Plasma diagnostics for pulsed-dc plasma-polymerizing para-xylene using QMS and OES

Plasma diagnostics for pulsed-dc plasma-polymerizing para-xylene using QMS and OES

The role of plasma analytics in leading‐edge semiconductor technologies

A Less Damaging Patterning Regime for a Successful Integration of Ultra Low-k Materials in Modern Nanoelectronic Devices

Contact Info

Product

Resources

About