Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma

Plasma patterning processes play a key role in modern Ultra Large Scale Integration (ULSI) device fabrication. With further scaling of device dimensions, plasma process characteristics become more and more the limiting factor in pattern minimization, not least due to parasitic effects caused by different plasma properties. Such effects are geometrical deviations in the etch profiles, the loss of critical dimensions, the undercut as well as the most critical sidewall damage while etching trenches and vias to fabricate the circuit contact and metallization system. Especially for modern dielectric materials on the base of carbon‐doped silica these drawbacks are much pronounced and worsen performance and power consumption of microelectronic devices. Finally, the charge damage of thin gate oxides during plasma processing results in reduced reliability and functionality of microelectronic devices. The complex interactions between conditions in the plasma bulk and the impacts on the wafer surface are not yet understood completely. With respect to the increasing complexity of modern semiconductor plasma etch equipment, the optimization of patterning processes using the empirical method becomes more and more impossible. This paper overviews typical challenges during plasma patterning processes in 28 nm and 22 nm technology nodes by means of today's Back‐End of Line integration schemes. Different plasma diagnostic methods provide an insight into the physical and chemical conditions of different etch chambers and their influence on process results and damaging behaviour.

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“…Former investigations found the additives C 4 F 8 and H 2 suitable for undercut reduction. O 2 and CO enhance this critical disadvantage …”

Section: Problems With Plasma Processes In Leading‐edge Technologiesmentioning

confidence: 99%

The role of plasma analytics in leading‐edge semiconductor technologies

Zimmermann

Haase

Lang

et al. 2018

Contributions to Plasma Physics

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“…11 QCLAS was applied using the quantum cascade laser measurement and control system Q-MACS [1] for timeresolved process monitoring of the concentration behavior of the precursor BCl 3 in an industrial PECVD reactor used in the production line for boriding and nitriding of steel components. 12, was further modified and optimized to enable time-resolved and in situ QCLAS measurements of the BCl 3 concentrations. Typical process conditions for the boriding were a total pressure of 200 Pa, a wall temperature of 800 K and a discharge voltage of 560 V leading to a power consumption up to 3 kW.…”

Section: Monitoring Of Pecvd Processes Containing Boronmentioning

confidence: 99%

“…Compared to lead salt diode lasers, distributed feedback (DFB) QCLs provide (i) continuous mode-hop free wavelength tuning, (ii) increasingly high output powers up to hundreds of mW, (iii) near room temperature operation, and in case of cw-DFB-QCLs (iv) narrow line width radiation. Since QCLs offer the possibilities to design very compact and robust spectroscopic instruments, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements [7][8][9][10][11][12][13]. Quantum cascade laser absorption spectroscopy (QCLAS) provides a means for determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetics.…”

Section: Introductionmentioning

confidence: 99%

In Situ Monitoring Capabiities of Quantum Cascade Laser Absorption Spectroscopy in Industrial Plasma Processes

Lang

Macherius

Glitsch

et al. 2015

Contrib. Plasma Phys.

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Plasmas in interaction with surfaces are of key importance in a wide range of applications, which include materials technology, microelectronics, environmental issues, and biomedicine. The intense use of plasma technological processes demands proper plasma diagnostic techniques for monitoring, controlling and optimization purposes in industrial environments. In particular, for the improvement of the efficiency of a production process, in situ diagnostic techniques with online capabilities are favorable. From the middle of the last decade a variety of phenomena in molecular non-equilibrium plasmas in which many short-lived and stable species are produced have been successfully studied with quantum cascade laser absorption spectroscopy (QCLAS) in the mid-infrared spectral range. It has been possible to determine absolute concentrations of species, temperatures, degrees of dissociation, dynamics of reaction processes and phenomena involving plasma-surface interactions using spectroscopy, thereby providing a link with chemical and kinetic modelling of the plasma. Since quantum cascade lasers (QCLs) emit near room temperature, i.e., without the need of cryogenic cooling, very compact and robust spectroscopic instruments can be designed. This has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. Recent applications of infrared absorption spectroscopy using QCLs for in situ monitoring of plasma processes in industrial environments are reviewed. Examples which emphasize the capabilities of QCLAS as plasma diagnostic technique in industrial plasma processes will be given.

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“…Non-thermal gas plasmas also contain the above reactive particles, while the gas phase remains near room temperature. Applications of thermal and non-thermal plasmas include: surface etching and cleaning, surface engineering and functionalization, deposition of organic and inorganic functional coatings, and sterilization of solid state biomaterials and medical devices [19–23]. In dentistry, application of non-thermal plasma use has focused on killing of oral bacteria [24–27], dentin adhesion enhancement [28], and tooth bleaching [29].…”

Section: Introductionmentioning

confidence: 99%

Effect of a non-thermal, atmospheric-pressure, plasma brush on conversion of model self-etch adhesive formulations compared to conventional photo-polymerization

et al. 2012

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Objective To determine the effectiveness and efficiency of non-thermal, atmospheric plasmas for inducing polymerization of model dental self-etch adhesives. Methods The monomer mixtures used were bis-[2-(methacryloyloxy)ethyl] phosphate (2MP) and 2-hydroxyethyl methacrylate (HEMA), with mass ratios of 70/30, 50/50 and 30/70. Water was added to the above formulations: 10–30 wt%. These monomer/water mixtures were treated steadily for 40 s under a non-thermal atmospheric plasma brush working at temperatures from 32° to 35°C. For comparison, photo-initiators were added to the above formulations for photo-polymerization studies, which were light-cured for 40 s. The degree of conversion (DC) of both the plasma- and light-cured samples was measured using FTIR spectroscopy with an attenuated total reflectance attachment. Results The non-thermal plasma brush was effective in inducing polymerization of the model self-etch adhesives. The presence of water did not negatively affect the DC of plasma-cured samples. Indeed, DC values slightly increased, with increasing water content in adhesives: from 58.3% to 68.7% when the water content increased from 10% to 30% in the adhesives with a 50/50 (2MP/HEMA) mass ratio. Conversion values of the plasma-cured groups were higher than those of light-cured samples with the same mass ratio and water content. Spectral differences between the plasma- and light-cured groups indicate subtle structural distinctions in the resultant polymer networks. Significance This research if the first to demonstrate that the non-thermal plasma brush induces polymerization of model adhesives under clinical settings by direct/indirect energy transfer. This device shows promise for polymerization of dental composite restorations having enhanced properties and performance.

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Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma

Cited by 15 publications

References 14 publications

The role of plasma analytics in leading‐edge semiconductor technologies

The role of plasma analytics in leading‐edge semiconductor technologies

In Situ Monitoring Capabiities of Quantum Cascade Laser Absorption Spectroscopy in Industrial Plasma Processes

Effect of a non-thermal, atmospheric-pressure, plasma brush on conversion of model self-etch adhesive formulations compared to conventional photo-polymerization

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