Cubic boron nitride films by d.c. and r.f. magnetron sputtering: layer characterization and process diagnostics

Hahn, J.; Friedrich, M.; Pintaske, R.; Schaller, Μ.; Kahl, N.; Zahn, Dietrich R. T.; Richter, Frank

doi:10.1016/0925-9635(95)00507-2

Cited by 76 publications

(30 citation statements)

References 17 publications

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“…Various substrate bias voltages (U B ) were used for the deposition, resulting in polycrystalline pure-phase h-BN (U B ϾϪ100 V͒ or high c-BN content (U B ϽϪ100 V͒ thin films. 33 Pure h-BN and pure boron targets, or pure boron targets only were used as targets during the rf or dc magnetron sputtering process, respectively. The process with boron nitride as target was reactive.…”

Section: Methodsmentioning

confidence: 99%

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Franke

Schubert

Neumann

et al. 1997

Journal of Applied Physics

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Frank, "Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range" (1997 Spectroscopic ellipsometry over the spectral range from 700 to 3000 cm Ϫ1 and from 1.5 to 3.5 eV is used to simultaneously determine phase and microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering on ͑100͒ silicon. The results are obtained from a single microstructure-dependent model for both infrared and visible-light thin-film anisotropic dielectric functions. The optical behavior of high c-BN content thin films is described by an effective medium approximation. We obtain the amount of h-BN within high c-BN content thin films. A thin oriented nucleation layer between the silicon substrate and the high c-BN content layer is demonstrated. The preferential arrangement of the grain c axes within the h-BN thin films are found to be dependent on the growth parameters. The results from the infrared and visible spectral range ellipsometry model are compared to each other and found to be highly consistent. © 1997 American Institute of Physics. ͓S0021-8979͑97͒06618-8͔

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Section: Methodsmentioning

confidence: 99%

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Franke

Schubert

Neumann

et al. 1997

Journal of Applied Physics

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“…Both rf magnetron sputtering from a h-BN target or a pure boron target, and dc sputtering from a pure boron target, were used for the BN thin-film deposition. 17 With the boron target the process was reactive, where 10-sccm nitrogen and 90-sccm argon were sufficient for the growth of stoichiometric BN films. The gas flux during the process with the h-BN target was 3-sccm nitrogen and 97-sccm argon.…”

Section: Methodsmentioning

confidence: 99%

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

et al. 1997

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Schubert, Mathias; Rheinlander, B.; Franke, E.; Neumann, H.; Tiwald, T. E.; and Woollam, John A., "Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example" (1997 We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixedphase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000 cm Ϫ1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto ͑100͒ silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material. ͓S0163-1829͑97͒08244-1͔

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“…12 The samples were investigated by HRTEM and SAD. A noncubic nucleation layer was observed between the substrate and the high c-BN content layer in the c-BN thin films.…”

mentioning

confidence: 99%

Infrared ellipsometry on hexagonal and cubic boron nitride thin films

Franke

Neumann

Schubert

et al. 1997

Applied Physics Letters

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Cubic boron nitride films by d.c. and r.f. magnetron sputtering: layer characterization and process diagnostics

Cited by 76 publications

References 17 publications

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

Infrared ellipsometry on hexagonal and cubic boron nitride thin films

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