The experimental dependence of microwave noise temperature on supplied electric power is used to study hot phonons in an InP-based modulationdoped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As heterostructure with a two-dimensional electron gas channel (n 2D = 2.3 × 10 12 cm −2 ). The effective hot-phonon temperature is extracted for two-subband and six-subband models treated in the electron-temperature approximation. The estimated value for the hot-phonon lifetime with respect to the longitudinal optical phonon conversion into other vibration modes is (0.9 ± 0.3) ps at room temperature.

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Articles you may be interested inExperimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell Appl. Phys. Lett.

The technique to investigate hot-electron noise in doped semiconductors at electric fields over 25 kV/cm is developed. The intervalley noise temperature at room temperature is found to saturate in GaAs at 15 000 K at fields over 100 kV/cm. From electric-field dependence of noise temperature, the intervalley scattering time of high-energy electrons from the ⌫ valley into the X valleys is estimated to be 30 fs Ͻ ⌫X Ͻ60 fs.

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The electric field dependence of the microwave noise temperature and the diffusion coefficient are found to be significantly different for two sets of AIGaAsJGaAs structures with different spacer thickness and aluminium mole fraction. In the samples with a 'wide' quantum well (OW), one maximum of the diffusion coefficient is observed at fields below the threshold for the intervalley intersubband gap wider than the k,T,,. A microscopic explanation of t h e observed noise spectra of AlGaAsiGaAs is given and used to determine kinetic parameters of the heterostructures.

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