Hot-electron velocity fluctuations in two-dimensional electron gas channels

Matulionis, A.; Aninkevičius, V.; Liberis, J.

doi:10.1016/s0026-2714(00)00081-0

Cited by 9 publications

(4 citation statements)

References 14 publications

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“…The obtained field dependence of the energy relaxation time in AlGaN/GaN 2-DEG channels is in contrast to a weak (if any) dependence reported for InGaAs channels at room temperature [2]. A decrease of the energy relaxation time upon electron heating has been reported for InGaAs channels at 80 K [4]. The latter dependence has been interpreted as follows: at cryogenic temperatures most electrons lack energy for emission of optical phonons, and a considerable contribution comes for acoustic phonons.…”

Section: Discussion Of the Energy Dissipationcontrasting

confidence: 52%

“…At cryogenic temperatures in the range of moderate and weak electric fields optical phonons do not play a major role, and this leads to an increase in the energy relaxation time. As a result, a contribution of acoustic phonons was evidenced for InGaAs 2-DEG channels at 80 K [4]. The values of energy relaxation time of 40 ps at 80 K [5], 45 ps at 90 K [6], 50 ps at 17 K [7,8] were reported for AlGaAs/GaAs channels at almost-equilibrium conditions.…”

Section: Introductionmentioning

confidence: 78%

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Hot-electron energy relaxation time in AlGaN/GaN

Matulionis

Liberis

Ardaravičius

et al. 2002

Semicond. Sci. Technol.

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The microwave noise technique is used to estimate the hot-electron energy relaxation time in an AlGaN/GaN heterostructure containing a two-dimensional electron gas subjected to a strong electric field applied in the plane of electron confinement. Room-temperature data show that the energy relaxation time decreases monotonously from about 1 ps at 2 kV cm −1 to 0.4 ps at 10 kV cm −1 electric field. The estimated low-field value is 1.4 ps.

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Section: Discussion Of the Energy Dissipationcontrasting

confidence: 52%

Section: Introductionmentioning

confidence: 78%

Hot-electron energy relaxation time in AlGaN/GaN

Matulionis

Liberis

Ardaravičius

et al. 2002

Semicond. Sci. Technol.

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“…4, triangles). The expected systematic decrease of the relaxation time is observed for GaInAs-2DEG channel at 80 K temperature 27 At a high supplied power, the experimental results on the AlGaN/AlN/GaN 2DEG channel (Fig. 4, diamonds) can be fitted with Monte Carlo simulation if hot phonons (non-equilibrium LO-phonon modes) are taken into account (squares) 18 .…”

Section: Hot-electron Energy Relaxationmentioning

confidence: 93%

Fluctuations and Ultrafast Processes in Voltage-Biased Two-Dimensional Channels

Matulionis¹

2009

Selected Topics in Electronics and Systems

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Hot-electron fluctuation techniques were developed for experimental investigation of picosecond and subpicosecond electronic and phononic processes in voltage-biased 2DEG channels of interest for microwave low-noise and high-power transistors. Examples illustrate real-space transfer, hotelectron energy relaxation, and occupancy relaxation of hot-phonon modes. The pioneering results on hot-electron energy relaxation and hot-phonon lifetime are confirmed by time-resolved response experiments. The fluctuation technique for measuring the hot-phonon lifetime as a function of the hot-phonon temperature is unique, no datum has been reported for comparison as yet.

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“…Real-space-transfer noise, intervalley transfer noise, impact ionization noise, and some others can be important at high electric fields [14]. In the range of subthreshold fields for these sources, the main correction goes for electron temperature fluctuations.…”

Section: Definitionsmentioning

confidence: 99%

HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN

Matulionis¹,

Liberis²,

Ardaravičius³

et al. 2003

Frontiers in Electronics

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Microwave noise technique is applied to study energy dissipation in an AIN/GaN heterostructure containing a two-dimensional electron gas channel. Measurements of the dissipated power and the noise temperature are performed at 80 K lattice temperature in the electric field range up to 40 kV/cm. The energy relaxation time is found to decrease from 40 ps to 0.55 ps when the bias is increased. The experimental data are discussed in the electron temperature approximation assuming electron energy dissipation on optical phonons and hot-phonon effects. Dependencies of the hot-phonon number and the hot-phonon temperature on the hot-electron temperature are deduced. The frequency cutoff imposed by the limited energy dissipation through optical phonons is estimated.

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Hot-electron velocity fluctuations in two-dimensional electron gas channels

Cited by 9 publications

References 14 publications

Hot-electron energy relaxation time in AlGaN/GaN

Hot-electron energy relaxation time in AlGaN/GaN

Fluctuations and Ultrafast Processes in Voltage-Biased Two-Dimensional Channels

HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN

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