QW-Shape-Dependent Hot-Electron Velocity Fluctuations in InGaAs-Based Heterostructures

Matulionis, A.; Aninkevičius, V.; Berntgen, J.; Gasquet, D.; Liberis, J.; Matulionienė, I.

doi:10.1002/1521-3951(199711)204:1<453::aid-pssb453>3.0.co;2-v

Cited by 8 publications

(4 citation statements)

References 4 publications

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“…Such a dependence was indeed observed in a recent study that found the microwave noise of InP HEMTs to be affected by the spacer thickness, although further analysis is required to verify that this change in noise can be primarily attributed to T d [65]. This prediction of the theory is also consistent with prior studies that observed a dependence of noise on the shape of the quantum well, where the shape was controlled by channel structure and composition [36].…”

Section: Discussionsupporting

confidence: 85%

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Theory of drain noise in high electron mobility transistors based on real-space transfer

Esho

Choi

Minnich

2022

Journal of Applied Physics

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High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the origin of the gate noise, that of drain noise is a topic of debate. Here, we report a theory of drain noise as a type of partition noise arising from real-space transfer of hot electrons from the channel to the barrier. The theory accounts for the magnitude and dependencies of the drain temperature and suggests strategies to realize devices with lower noise figure.

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Section: Discussionsupporting

confidence: 85%

“…energy relaxation [28][29][30][31][32][33][34], microwave noise [35,36], and related properties in 2D quantum wells [37][38][39][40][41]. The physical picture of high-field transport obtained from these studies is that electrons are heated by the electric field and lose energy primarily by optical phonon emission.…”

Section: Introductionmentioning

confidence: 99%

Theory of drain noise in high electron mobility transistors based on real-space transfer

Esho

Choi

Minnich

2022

Journal of Applied Physics

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“…13 Real-space transfer noise appears at fields exceeding 2-3 kV/cm in the InGaAs channels, 13 while intervalley noise requires even higher fields. Thus, at not too high electric fields, two sources of fluctuations remain active in the direction of the mean current: the velocity fluctuations determined by the electron temperature and the fluctuations in electron temperature.…”

mentioning

confidence: 99%

Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

Matulionis¹,

Aninkevičius²,

Liberis³

et al. 1999

Applied Physics Letters

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“…RST is the emission of 2DEG carriers from the channel into the barrier prior to valley transfer [24]. RST noise has earlier been proposed for GaAs HEMTs [26] and InAlAs/InGaAs/InAlAs/InP quantum wells [27]. A well-known manifestation of RST in HEMTs is negative differential resistance (NDR) in the I − V output curves at elevated gate voltage [25].…”

Section: Discussionmentioning

confidence: 99%

Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

Pourkabirian²,

Bergsten³

et al. 2022

IEEE Electron Device Lett.

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InP high electron mobility transistors (InP HEMTs) with different spacer thickness 1 to 7 nm in the InAlAs-InGaAs heterostructure have been fabricated and characterized at 5 K with respect to electrical dc and rf properties. The InP HEMT noise performance was extracted from gain and noise measurements of a hybrid low-noise amplifier (LNA) at 5 K equipped with discrete transistors. When biased for optimal noise operation, the LNA using 5 nm spacer thickness InP HEMTs achieved the lowest average noise temperature of 1.4 K at 4-8 GHz. The InP HEMT channel noise was estimated from the drain noise temperature which confirmed the minimum in noise temperature for the 5 nm spacer thickness InP HEMT. It is suggested that the spacer thickness acts to control the degree of real-space transfer of electrons from the channel to the barrier responsible for the observed noise variation in the cryogenic InP HEMTs.

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QW-Shape-Dependent Hot-Electron Velocity Fluctuations in InGaAs-Based Heterostructures

Cited by 8 publications

References 4 publications

Theory of drain noise in high electron mobility transistors based on real-space transfer

Theory of drain noise in high electron mobility transistors based on real-space transfer

Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

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