Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

Matulionis, A.; Aninkevičius, V.; Liberis, J.; Matulionienė, I.; Berntgen, J.; Heime, K.; Hartnagel, H.L.

doi:10.1063/1.123705

Cited by 14 publications

(15 citation statements)

References 9 publications

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“…The associated additional noise appears in the bias direction. An estimation similar to that used in [2] shows that the contribution of this additional noise is positive. Consequently, the contribution due to the electron temperature fluctuations cannot account for the observed strongly subparabolic dependence of the noise temperature on the electric field.…”

Section: Noise Temperature and Electron Temperaturementioning

confidence: 93%

“…The noise technique can be applied to 2-DEG channels for field-effect transistors without addressing special heterostructures. The energy relaxation time was found to be almost independent of electric field in InAlAs/InGaAs/InAlAs and GaSb/AlSb/InAs/AlSb quantum-well 2-DEG channels at room temperature [2,3]. In InGaAs channels subjected to a high electric field, the energy relaxation was ascribed to predominant electronoptical-phonon scattering.…”

Section: Introductionmentioning

confidence: 91%

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Hot-electron energy relaxation time in AlGaN/GaN

Matulionis

Liberis

Ardaravičius

et al. 2002

Semicond. Sci. Technol.

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The microwave noise technique is used to estimate the hot-electron energy relaxation time in an AlGaN/GaN heterostructure containing a two-dimensional electron gas subjected to a strong electric field applied in the plane of electron confinement. Room-temperature data show that the energy relaxation time decreases monotonously from about 1 ps at 2 kV cm −1 to 0.4 ps at 10 kV cm −1 electric field. The estimated low-field value is 1.4 ps.

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Section: Noise Temperature and Electron Temperaturementioning

confidence: 93%

Section: Introductionmentioning

confidence: 91%

Hot-electron energy relaxation time in AlGaN/GaN

Matulionis

Liberis

Ardaravičius

et al. 2002

Semicond. Sci. Technol.

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“…(6), the hot-phonon decay is the bottleneck for the hot-electron energy relaxation time [19]. Thus, the plasmon effect can be illustrated by the available data on the energy relaxation at different 2DEG density [26,27] (Fig. 5, triangles).…”

Section: Experimental Techniquementioning

confidence: 97%

Ultrafast decay of non‐equilibrium (hot) phonons in GaN‐based 2DEG channels

Matulionis¹

2009

Phys. Status Solidi (c)

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Fast and ultrafast decay of non‐equilibrium longitudinal optical phonons (hot phonons) is discussed on examples of two‐dimensional electron gas (2DEG) channels confined in nominally‐undoped nitride and selectivelydoped arsenide heterostructures subjected to pulsed dc electric power. At a low–moderate power, a nonmonotonous dependence of the hot‐phonon lifetime on the 2DEG density is found. The fastest decay takes place at ∼2.5 × 1012 cm–2 in GaInAs 2DEG channel and at ∼7 × 1012 cm–2 in GaN 2DEG channel. The result is discussed in terms of plasmon–LO‐phonon resonance. The hot‐phonon lifetime decreases when the supplied power is increased if the 2DEG density exceeds the resonance density. The shortest hot‐phonon lifetime of 60 fs is obtained at/above 50 nW/electron for the lattice‐matched AlInN/AlN/GaN 2DEG channel (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…(2) for τ ε = 0.9 ps; this value is taken from Ref. [4]. At a low supplied power, the noise temperature equals the electron temperature.…”

Section: Squares Inmentioning

confidence: 99%

“…The electron temperature was estimated from noise temperature measurements at a microwave frequency near 10 GHz, where generation-recombination, flicker, and other low-frequency sources of noise are of negligible intensity [4,5].…”

Section: Squares Inmentioning

confidence: 99%

Hot Phonons in a Biased Two-Dimensional InGaAs Channel

Aninkevičius¹,

Liberis²,

Matulionis³

et al. 2005

Acta Phys. Pol. A

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Experimental dependence of microwave noise temperature on supplied electric power is used to estimate hot-phonon number in a modulation-doped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As two-dimensional electron gas channel (n 2D = 2.3×10 12 cm −2 ). The nonequilibrium occupancy of the involved longitudinal optical phonon states exceeds the equilibrium one nearly twice at 2 kV/cm electric field.

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Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

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Cited by 14 publications

References 9 publications

Hot-electron energy relaxation time in AlGaN/GaN

Hot-electron energy relaxation time in AlGaN/GaN

Ultrafast decay of non‐equilibrium (hot) phonons in GaN‐based 2DEG channels

Hot Phonons in a Biased Two-Dimensional InGaAs Channel

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