Hot Phonons in a Biased Two-Dimensional InGaAs Channel

Abstract

Experimental dependence of microwave noise temperature on supplied electric power is used to estimate hot-phonon number in a modulation-doped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As two-dimensional electron gas channel (n 2D = 2.3×10 12 cm −2 ). The nonequilibrium occupancy of the involved longitudinal optical phonon states exceeds the equilibrium one nearly twice at 2 kV/cm electric field.