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The technique to investigate hot-electron noise in doped semiconductors at electric fields over 25 kV/cm is developed. The intervalley noise temperature at room temperature is found to saturate in GaAs at 15 000 K at fields over 100 kV/cm. From electric-field dependence of noise temperature, the intervalley scattering time of high-energy electrons from the ⌫ valley into the X valleys is estimated to be 30 fs Ͻ ⌫X Ͻ60 fs.

The experimental results and Monte-Carlo calculations of hot electron noise are presented for n-InSb at 77 K and 10 K. The influence of inelastic optical as well as ionized impurity scattering on the noise characteristics is examined

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