NOISE AND DIFFUSIVITY OF HOT ELECTRONS IN n-TYPE InSb

Bareikis, V.; Galdikas, Arvaidas; Miliu¡yté, R.; Pozhela, Juras; Viktoravičius,

doi:10.1051/jphyscol:1981725

Cited by 9 publications

(11 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Under dynamical conditions, such a cyclic motion with the transit-time frequency f E = 1/τ E produces a variety of quite important physical phenomena. For example, the transittime frequency manifests itself in: (i) damping oscillations of the carrier velocity and energy during a transient response of the carrier ensemble under a step-like switching of the dc electric field [9], (ii) resonant enhancement of the current noise spectrum at a frequency close to f E [10][11][12], (iii) a bunching of carriers in momentum space [13][14][15], (iv) noise upconversion effects [16] under alternating (ac) electric field, etc.…”

Section: Transit-time Resonance: Concept and Propertiesmentioning

confidence: 99%

“…Figure 5 reports the results of available calculations and experiments for various bulk materials and 2D structures already shown in figure 4 in terms of universal materialindependent generation bands. Such a universal representation is obtained when the electric field E and the generation frequency f gen are normalized, respectively, to the effective electric field of po-phonon emission (10) and the po-phonon effective scattering rate given by:…”

Section: Dynamic Negative Differential Mobilitymentioning

confidence: 99%

“…In concluding this subsection let us note that more detailed MC results on the DNDM induced by OPTTR and associated features can be found in [11,12,[33][34][35][36][37][38][39]46] for the 3D case and [33,[40][41][42][43][44][45][46] for the 2D case. po and frequency ν i po defined by equations (10) and (11), respectively.…”

Section: Dynamic Negative Differential Mobilitymentioning

confidence: 99%

See 2 more Smart Citations

Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission

Starikov

Shiktorov

Gruz̆inskis

et al. 2008

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

The conditions for THz radiation generation caused by electron transit-time resonance in momentum and real spaces under optical phonon emission are analyzed for nitride-based materials and their structures. It is shown that such a mechanism provides a unique possibility to realize sub-THz and THz radiation generation at the border between the electro-optical and electronic techniques by using two alternative approaches: (i) amplification of transverse electromagnetic waves in 3D bulk materials and 2D quantum wells, and (ii) longitudinal current-field instabilities in sub-micron and micron n(+)nn(+) diodes. Estimations of frequency regions, output power and efficiency of the generation demonstrate that nitrides are promising materials for THz radiation generation.

show abstract

Section: Transit-time Resonance: Concept and Propertiesmentioning

confidence: 99%

Section: Dynamic Negative Differential Mobilitymentioning

confidence: 99%

Section: Dynamic Negative Differential Mobilitymentioning

confidence: 99%

See 1 more Smart Citation

Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission

Starikov

Shiktorov

Gruz̆inskis

et al. 2008

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…The smaller the penetration into the active region is the closer the carrier moves to the cyclic trajectory. Such a cyclic motion is responsible for a number of effects, including transient velocity oscillations in a nonstationary state, 29 oscillations of the correlation function of velocity fluctuations and corresponding sharp peak of the spectral density of velocity fluctuations at the transit time frequency, E ϭ1/ E , in a stationary state, 18,19,30 etc. In particular, these conditions were found [31][32][33][34] to favor the onset of highfrequency NDM which can arise in frequency regions near the resonant frequencies corresponding to the fundamental and higher harmonics of E .…”

Section: General Conditions For Opttrmentioning

confidence: 99%

Monte Carlo simulation of the generation of terahertz radiation in GaN

Starikov

Shiktorov

Gruz̆inskis

et al. 2001

Journal of Applied Physics

View full text Add to dashboard Cite

Terahertz generation in submicron GaN diodes within the limited space-charge accumulation regime J. Appl. Phys. 98, 064507 (2005); 10.1063/1.2060956 Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode J. Appl. Phys. 95, 7925 (2004); 10.1063/1.1702144 Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation J. Appl. Phys. 93, 4836 (2003); 10.1063/1.1562734 Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaNThe conditions for microwave power generation at low temperatures under optical phonon emission are analyzed by Monte Carlo simulations of both small-and large-signal responses in bulk zinc blende and wurtzite GaN. As a result of the high optical phonon energy and the strong interaction of electrons with optical phonons in GaN a general improvement on the transit-time resonance and a considerable increase in the maximum generation frequency and power can be achieved in comparison to the widely studied III-V materials such as GaAs and InP. A dynamic negative differential mobility caused by transit-time resonance occurs in a wide frequency range of about 0.05-3 THz and persists in the THz frequency range up to the liquid nitrogen temperature with doping levels up to about 5ϫ10 16 cm Ϫ3 . The efficiency of the amplification and generation is found to depend nonmonotonously on static and microwave electric field amplitudes, generation frequency, and doping level so that for each generation frequency there exists an optimal range of parameter values. Under optimal conditions a generation efficiency of about 1% to 2% can be achieved in the 0.5-1.5 THz frequency range.

show abstract

“…Initial measurements of the PSD versus electric field in GaAs exhibited a peak at an electric field around the onset of negative differential resistance (∼ 2 − 3 kV cm −1 ) [32]. Although the quantitative results may have been complicated by a non-negligible time-domain response of the electric circuit used in the experiment [33], later measurements using microwave pulses confirmed the trend [34,35]. The first numerical investigations of noise phenomena in GaAs focused primarily on calculating the diffusion coefficient at high fields [36], noting that the high-field diffusion coefficient differed substantially from that predicted using the Einstein relation [37,38].…”

Section: Introductionmentioning

confidence: 92%

High-field transport and hot electron noise in GaAs from first principles: role of two-phonon scattering

Cheng,

Sun,

Sun

et al. 2022

Preprint

View full text Add to dashboard Cite

High-field charge transport in semiconductors is of fundamental interest and practical importance. While the ab initio treatment of low-field transport is well-developed, the treatment of high-field transport is much less so, particularly for multi-phonon processes that are reported to be relevant in GaAs. Here, we report a calculation of the high-field transport properties and power spectral density (PSD) of hot electrons in GaAs from first principles including on-shell two-phonon (2ph) scattering. The on-shell 2ph scattering rates are found to qualitatively alter the high-field distribution function by increasing both the momentum and energy relaxation rates as well as contributing markedly to intervalley scattering. This finding reconciles a long-standing discrepancy regarding the strength of intervalley scattering in GaAs as inferred from transport and optical studies. The characteristic non-monotonic trend of PSD with electric field is not predicted at this level of theory, indicating that off-shell 2ph or other processes play a fundamental role in high-field transport. This observation highlights how ab initio calculations of PSD may be used as a stringent test of the electron-phonon interaction in semiconductors.

show abstract

NOISE AND DIFFUSIVITY OF HOT ELECTRONS IN n-TYPE InSb

Abstract: The experimental results and Monte-Carlo calculations of hot electron noise are presented for n-InSb at 77 K and 10 K. The influence of inelastic optical as well as ionized impurity scattering on the noise characteristics is examined

Cited by 9 publications

References 1 publication

Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission

Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission

Monte Carlo simulation of the generation of terahertz radiation in GaN

High-field transport and hot electron noise in GaAs from first principles: role of two-phonon scattering

Contact Info

Product

Resources

About