Γ-<i>X</i>intervalley-scattering time constant for GaAs estimated from hot-electron noise spectroscopy data

Aninkevičius, V.; Bareikis, V.; Katilius, R.; Liberis, J.; Matulionienė, I.; Matulionis, A.; Sakalas, P.; Šaltis, R.

doi:10.1103/physrevb.53.6893

Cited by 11 publications

(11 citation statements)

References 5 publications

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“…S4 and S11). In our system, electron transfer to X-valleys lying above the G-valley by De GX ≈ 550 meV is important (20). The upper valleys serve as a storage for energetic electrons and intensify the feature of nonlocal power dissipation as described below.…”

mentioning

confidence: 88%

“…Despite decades of extensive studies, the real-space characteristics of shot noise have been unknown because the existing noise probes were physically immobile (21,22). In addition, experiments have not been able to access noise frequencies higher than a few hundred gigahertz (20), which is far below the typical intrinsic scattering rate of hot electrons; thus, important signatures of ultrafast phenomena have remained obscure.…”

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confidence: 99%

“…The cooling-down process is, however, relatively slow because the energy relaxation time due to electron-phonon interaction is relatively long (t e-ph ≈ 1.1 ps). The energetic electrons, on the other hand, pass through the constricted region at high velocities, v d ≈ (1.9 to 2.1) × 10 5 m/s (velocity overshoot) (20,38). It follows that the energetic electrons drift a large distance, L drift,e-ph = v d t e-ph = 210 to 230 nm, before being equilibrated with the lattice.…”

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confidence: 99%

“…The feature of nonlocal energy dissipation is enhanced further by the transfer of hot electrons to upper satellite valleys (20,33) [section 9 of (27)]. It is well known that hot electrons transfer from the G-valley to the satellite X-and/or Lvalleys at high electric fields (20). The effective mass of electrons in the upper valleys is much larger than in G-valley, so conductance is reduced, causing the saturation of current I for 4.0 V < V b or 15 kV/cm < E c ( Fig.…”

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confidence: 99%

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Imaging of nonlocal hot-electron energy dissipation via shot noise

Weng

Komiyama

Yang

et al. 2018

Science

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In modern microelectronic devices, hot electrons accelerate, scatter, and dissipate energy in nanoscale dimensions. Despite recent progress in nanothermometry, direct real-space mapping of hot-electron energy dissipation is challenging because existing techniques are restricted to probing the lattice rather than the electrons. We realize electronic nanothermometry by measuring local current fluctuations, or shot noise, associated with ultrafast hot-electron kinetic processes (~21 terahertz). Exploiting a scanning and contact-free tungsten tip as a local noise probe, we directly visualize hot-electron distributions before their thermal equilibration with the host gallium arsenide/aluminium gallium arsenide crystal lattice. With nanoconstriction devices, we reveal unexpected nonlocal energy dissipation at room temperature, which is reminiscent of ballistic transport of low-temperature quantum conductors.

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confidence: 88%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Imaging of nonlocal hot-electron energy dissipation via shot noise

Weng

Komiyama

Yang

et al. 2018

Science

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“…This work will provide useful hints to deeper understanding of the nonequilibrium properties of electrical conductors, through a simple and convenient method for modeling nonequilibrium layered conductors.Introduction. -Electro-thermal behavior is a key ingredient for understanding charge carrier transport phenomena in semiconductor devices including twodimensional (2D) materials, hetero Junctions, and strong correlated systems [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In small devices on nanoscales, hot electron generation and the resulting characteristic in-teraction with the host crystal lattice (or phonons) complicates the electro-thermal analysis and limits the device performance [16,17].…”

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confidence: 99%

Simulation of temperature profile for the electron and the lattice systems in laterally structured layered conductors

Yang

Qian

et al. 2019

EPL

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PACS 05.70.Ln -Nonequilibrium and irreversible thermodynamics PACS 44.05.+e -Analytical and numerical techniques PACS 73.63.-b -Electronic transport in nanoscale materials and structures Abstract -Electrons in operating microelectronic semiconductor devices are accelerated by locally varying strong electric field to acquire effective electron temperatures nonuniformly distributing in nanoscales and largely exceeding the temperature of host crystal lattice. The thermal dynamics of electrons and the lattice are hence nontrivial and its understanding at nanoscales is decisively important for gaining higher device performance. Here, we propose and demonstrate that in layered conductors nonequilibrium nature between the electrons and the lattice can be explicitly pursued by simulating the conducting layer by separating it into two physical sheets representing, respectively, the electron-and the lattice-subsystems. We take, as an example of simulating GaAs devices, a 35nm thick 1µm wide U-shaped conducting channel with 15nm radius of curvature at the inner corner of the U-shaped bend, and find a remarkable hot spot to develop due to hot electron generation at the inner corner. The hot spot in terms of the electron temperature achieves a significantly higher temperature and is of far sharper spatial distribution when compared to the hot spot in terms of the lattice temperature. Similar simulation calculation made on a metal (NiCr) narrow lead of the similar geometry shows that a hot spot shows up as well at the inner corner, but its strength and the spatial profiles are largely different from those in semiconductor devices; viz., the amplitude and the profile of the electron system are similar to those of the lattice system, indicating quasi-equilibrium between the two subsystems. The remarkable difference between the semiconductor and the metal is interpreted to be due to the large difference in the electron specific heat, rather than the difference in the electron phonon interaction. This work will provide useful hints to deeper understanding of the nonequilibrium properties of electrical conductors, through a simple and convenient method for modeling nonequilibrium layered conductors.

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Noise, Hot Carrier Effects

Matulionis¹

2007

Wiley Encyclopedia of Electrical and Electronics Engineering

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Γ-Xintervalley-scattering time constant for GaAs estimated from hot-electron noise spectroscopy data

Cited by 11 publications

References 5 publications

Imaging of nonlocal hot-electron energy dissipation via shot noise

Imaging of nonlocal hot-electron energy dissipation via shot noise

Simulation of temperature profile for the electron and the lattice systems in laterally structured layered conductors

Noise, Hot Carrier Effects

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