Noise, Hot Carrier Effects

Matulionis, A.

doi:10.1002/047134608x.w3155.pub2

Cited by 4 publications

(1 citation statement)

References 53 publications

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“…Electron confinement in a 2DEG introduces specific fast and ultrafast electronic processes. The associated time constants have been extracted from hotelectron fluctuations [33][34][35].…”

Section: Hot-electron Fluctuationsmentioning

confidence: 99%

GaN-based two-dimensional channels: hot-electron fluctuations and dissipation

Matulionis

2009

J. Phys.: Condens. Matter

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Ultrafast electronic and phononic processes are investigated in voltage-biased GaN-based two-dimensional channels of interest for heterostructure field-effect transistors. The accumulation of non-equilibrium longitudinal optical phonons (hot phonons) is treated for AlGaN/GaN, AlGaN/AlN/GaN, AlGaN/GaN/AlN/GaN, and AlInN/AlN/GaN structures in terms of the hot-phonon temperature and hot-phonon lifetime. The hot-phonon effect on hot-electron energy relaxation and hot-phonon number relaxation is extracted from an experimental investigation of hot-electron fluctuations and power dissipation. The measured equivalent hot-phonon temperature is nearly equal to the hot-electron temperature. The hot-phonon lifetime varies in the range from 150 to 800 fs and depends on electron density, temperature, and supplied electric power. The experimental dependence of the hot-phonon lifetime on the hot-phonon mode occupancy is unique-neither Raman optical-photon scattering nor optical-phonon-assisted intersubband absorption has, as yet, provided any experimental data of this sort.

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“…Electron confinement in a 2DEG introduces specific fast and ultrafast electronic processes. The associated time constants have been extracted from hotelectron fluctuations [33][34][35].…”

Section: Hot-electron Fluctuationsmentioning

confidence: 99%

GaN-based two-dimensional channels: hot-electron fluctuations and dissipation

Matulionis

2009

J. Phys.: Condens. Matter

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Hot-electron velocity fluctuations in two-dimensional electron gas channels

Matulionis¹,

Aninkevičius²,

Liberis³

2000

Microelectronics Reliability

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Fluctuation technique for investigation of ultrafast processes

Matulionis¹

2007

Lithuanian J. Phys.

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Microwave fluctuations contain information on hot-electron energy relaxation, intervalley transfer, real-space transfer, and other ultrafast electronic processes in semiconductors and semiconductor structures. Based on this, the novel fluctuation technique was developed for investigation of ultrafast hot-phonon effects in two-dimensional (2D) and three-dimensional (3D) channels of importance for high-speed electronics. The hot-phonon lifetime (deduced from the hot-electron fluctuations) is in good agreement with the a posteriori reported data obtained through femtosecond-laser pump-probe experiments. Moreover, the fluctuation technique demonstrates the unique experimental possibility to study the lifetime as a function of the electron temperature in a voltage-biased 2D channel, while neither Raman photon scattering nor phonon-assisted inter-sub-band absorption has provided data of this sort as yet.

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Noise, Hot Carrier Effects

Abstract: The sections in this article are Introduction Hot‐Electron Velocity Fluctuations Theoretic Background Experimental Techniques Experimental Results on Hot‐Electron Noise Summary

Cited by 4 publications

References 53 publications

GaN-based two-dimensional channels: hot-electron fluctuations and dissipation

GaN-based two-dimensional channels: hot-electron fluctuations and dissipation

Hot-electron velocity fluctuations in two-dimensional electron gas channels

Fluctuation technique for investigation of ultrafast processes

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