In modern microelectronic devices, hot electrons accelerate, scatter, and dissipate energy in nanoscale dimensions. Despite recent progress in nanothermometry, direct real-space mapping of hot-electron energy dissipation is challenging because existing techniques are restricted to probing the lattice rather than the electrons. We realize electronic nanothermometry by measuring local current fluctuations, or shot noise, associated with ultrafast hot-electron kinetic processes (~21 terahertz). Exploiting a scanning and contact-free tungsten tip as a local noise probe, we directly visualize hot-electron distributions before their thermal equilibration with the host gallium arsenide/aluminium gallium arsenide crystal lattice. With nanoconstriction devices, we reveal unexpected nonlocal energy dissipation at room temperature, which is reminiscent of ballistic transport of low-temperature quantum conductors.

Single-photon detectors that can resolve photon number play a key role in advanced quantum information technologies. Despite significant progress in improving conventional photon-counting detectors and developing novel device concepts, single-photon detectors that are capable of distinguishing incident photon number at room temperature are still very limited. We demonstrate a room-temperature photon-number-resolving detector by integrating a field-effect transistor configuration with core/shell-like nanowires. The shell serves as a photosensitive gate, shielding negative back-gated voltage, and leads to a persistent photocurrent. At room temperature, our detector is demonstrated to identify 1, 2, and 3 photon-number states with a confidence of >82%. The detection efficiency is determined to be 23%, and the dark count rate is 1.87 × 10 Hz. Importantly, benefiting from the anisotropic nature of 1D nanowires, the detector shows an intrinsic photon-polarization selection, which distinguishes itself from existing intensity single-photon detectors. The unique performance for the single-photon detectors based on single nanowire demonstrates the great potential for future single-photon detection applications.

Probing spatial variation of temperature at the nanoscale provides key information for exploring diverse areas of modern science and technology. Despite significant progress in the development of contact thermometers with high spatial resolution, one inherent disadvantage is that the quantitative analysis of temperature can be complicated by the direct thermal contact. On the other hand, noncontact infrared radiation thermometer is free from such contact-induced disturbance, but suffers from insufficient spatial resolution stemming from diffraction-limit in the micrometer range. Combining a home-built sensitive infrared microscope with a noncontact scattering probe, we detected fluctuating electromagnetic evanescent fields on locally heated material surface, and thereby mapped temperature distribution in subwavelength scales. We visualize nanoscale Joule heating on current-carrying metal wires and find localized "hot-spots" developing along sharp corners of bended wires in the temperature mapping. Simulation calculations give quantitative account of the nanoscale temperature distribution, definitely indicating that the observed effect is caused by the nonuniform energy dissipation due to the current-crowding effect. The equipment in this work is a near-field version of infrared radiation thermometer with a spatial resolution far below the detection wavelength (<100 nm, or λ/140) in which local temperature distribution of operating nanoscale devices can be noninvasively mapped with a temperature resolution ∼2 K at room-temperature.

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn “photon-switches” to “OFF” state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

We present the photocurrent spectrum study of a quantum dot (QD) single-photon detector using a reset technique which eliminates the QD's “memory effect.” By applying a proper reset frequency and keeping the detector in linear-response region, the detector's responses to different monochromatic light are resolved which reflects different detection efficiencies. We find the reset photocurrent tails up to 1.3 μm wavelength and near-infrared (∼1100 nm) single-photon sensitivity is demonstrated due to interband transition of electrons in QDs, indicating the device a promising candidate both in quantum information applications and highly sensitive imaging applications operating in relative high temperatures (&gt;80 K).

Since the invention of transistors, the flow of electrons has become controllable in solid-state electronics. The flow of energy, however, remains elusive, and energy is readily dissipated to lattice via electron-phonon interactions. Hence, minimizing the energy dissipation has long been sought by eliminating phonon-emission process. Here, we report a different scenario for facilitating energy transmission at room temperature that electrons exert diffusive but quasiadiabatic transport, free from substantial energy loss. Direct nanothermometric mapping of electrons and lattice in current-carrying GaAs/AlGaAs devices exhibit remarkable discrepancies, indicating unexpected thermal isolation between the two subsystems. This surprising effect arises from the overpopulated hot longitudinal-optical (LO) phonons generated through frequent emission by hot electrons, which induce equally frequent LO-phonon reabsorption (“hot-phonon bottleneck”) cancelling the net energy loss. Our work sheds light on energy manipulation in nanoelectronics and power-electronics and provides important hints to energy-harvesting in optoelectronics (such as hot-carrier solar-cells).

We systematically compare the active and the passive methods for infrared scattering-type scanning near-field optical microscopy (s-SNOM). The active SNOM makes use of IR lasers or incoherent thermal emitters to illuminate a sample, whereas the passive method directly measures extremely weak fluctuating electromagnetic evanescent fields spontaneously generated at the sample surface without any external illumination. For this reason, our specific version of the passive SNOM is called a scanning noise microscope (SNoiM). In thermal equilibrium, the two methods are shown to be similar, both mapping the nanoscale variation of the complex dielectric constant of the sample. We demonstrate that a significant difference between the two methods emerges when the sample is driven out of thermal equilibrium, viz., the active SNOM is insensitive whereas the SNoiM is extremely sensitive to the electron temperature in locally heated nanoregions.

The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: Ea,micro from the built-in potential in the microscale and Ea,nano related to the thermally assisted tunneling in nanoscale. The activation energies Ea,micro and Ea,nano decrease exponentially and linearly with increasing applied electric field, respectively.