Room-Temperature Single-Photon Detector Based on Single Nanowire

Luo, Wenjin; Weng, Qianchun; Long, Mingsheng; Wang, Peng; Gong, Fan; Fang, Hehai; Luo, Man; Wang, Wenjuan; Wang, Zhen; Zheng, Dingshan; Hu, Weida; Chen, Xiaoshuang; Lü, Wei

doi:10.1021/acs.nanolett.8b01795

Cited by 49 publications

(44 citation statements)

References 42 publications

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“…The transfer characteristics of the device with V ds = 1 V in dark and under 520 nm illumination are demonstrated in Figure c. The dark current decreases with the increase of a negative back‐gate voltage since the channel is depleted and the Dirac point occurs at V gs = −31 V. Interestingly, unlike common phototransistors in which the photocurrent decreases simultaneously with the dark current, the photocurrent of our device increases while dark current roughly decreases with V gs ←18 V. The p–n junction may play a key role in this phenomenon, so we measure the short‐circuit current of our device with V gs ranging from −40 to 40 V. The dark current in this condition is on the scale of 10 −13 A, mainly depending on the measuring limit of source meter, such a low dark current may facilitate the weak signal detecting . With the WSe 2 channel gradually p‐doped by the increasing negative back‐gate voltage, the Pd–WSe 2 Schottky junction decays and a strong intramolecular p–n junction occurs.…”

Section: Resultsmentioning

confidence: 99%

WSe₂ Photovoltaic Device Based on Intramolecular p–n Junction

Tang

Wang

et al. 2019

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High quality p–n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next‐generation photovoltaic devices. Based on transfer technology, large amounts of vertical heterojunctions based on 2DLMs are investigated. However, the complicated fabrication process and the inevitable defects at the interfaces greatly limit their application prospects. Here, an in‐plane intramolecular WSe2 p–n junction is realized, in which the n‐type region and p‐type region are chemically doped by polyethyleneimine and electrically doped by the back‐gate, respectively. An ideal factor of 1.66 is achieved, proving the high quality of the p–n junction realized by this method. As a photovoltaic detector, the device possesses a responsivity of 80 mA W−1 (≈20% external quantum efficiency), a specific detectivity of over 1011 Jones and fast response features (200 µs rising time and 16 µs falling time) at zero bias, simultaneously. Moreover, a large open‐circuit voltage of 0.38 V and an external power conversion efficiency of ≈1.4% realized by the device also promises its potential in microcell applications.

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Section: Resultsmentioning

confidence: 99%

WSe₂ Photovoltaic Device Based on Intramolecular p–n Junction

Tang

Wang

et al. 2019

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“…[ 5–10 ] With this in mind, various low‐dimensional nanostructures, especially nanowires (NWs) and two‐dimensional (2D) materials, have been extensively investigated in the past few years. [ 11–16 ] For example, Hu and co‐workers fabricated IR detectors based on parallel GaSb NW arrays that exhibited a photosensitivity of 4.5 with rise and decay times of 195.1 and 380.4 µs, respectively. [ 13 ] Many of IR detectors have been recently built on various 2D semiconducting nanostructures with varying photosensitivities, response speeds, etc.…”

Section: Figurementioning

confidence: 99%

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

et al. 2020

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investigated in the past few years. [11][12][13][14][15][16] For example, Hu and co-workers fabricated IR detectors based on parallel GaSb NW arrays that exhibited a photosensitivity of 4.5 with rise and decay times of 195.1 and 380.4 µs, respectively. [13] Many of IR detectors have been recently built on various 2D semiconducting nanostructures with varying photosensitivities, response speeds, etc. However, the performance of such devices, especially in terms of photosensitivity, is still quite low and cannot meet practical requirements. [17][18][19] To enhance the photosensitivity and enable the performance to reach a suitable level for commercial IR detector and imaging systems, [20] external amplification circuits are often utilized to improve the processing efficiency and image recognition rate. [21,22] However, the complex circuits of such IR systems, including IR detectors, external amplifiers, and processing units, introduce challenges with respect to power consumption, device integration, and noise processing. Therefore, new and highly compacted integrated IR systems with on-chip amplifying units are highly desirable for large-scale implementation and fault-tolerant processing in IR imaging.In this work, a simple and highly integrated IR detection amplification (IRDA) system was designed for high-performance IR imaging applications. A Ga-doped In 2 O 3 NW-based field effect transistor (FET) was integrated into a flexible all-NW IRDA system, and was found to enhance the photosensitivity of the system by several orders of magnitude. The resulting system exhibited a high photosensitivity, external quantum efficiency (EQE), and detectivity under 1342 nm light irradiation, with values as high as 7.6 × 10 4 , 1508%, 4.9 × 10 12 Jones, respectively. Furthermore, the contrast imaging of 1342 nm IR light in a 10 × 10 device array was significantly improved by integrating the IRDA system. As a proof-of-concept, the IRDA system array is used here to increase the accuracy and processing efficiency of subsequent image recognition by artificial neural network (ANN) training. These results suggest that an all-NW based IRDA system has significant potential for application in future flexible IR imaging technologies.Visual perception is an important part of human perception, providing an essential bridge between human beings and external information. [23] To simulate and expand the functionality of human vision, it is critical to obtain clear image information. Generally, the human retina detects visual Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art lowdimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA)...

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“…The further position recognition demo of graphene‐Si heterostructure shows an exciting progress in the field of PSD applications . Actually, besides 2D materials, 1D IR detectors with ultrahigh optical gain have been fabricated and even can resolve single‐photon signal at room temperature with the help of photogating effect …”

Section: Room‐temperature Ir Photon Detectors Based On Atomic Layer Mmentioning

confidence: 99%

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Wang

Xia

et al. 2019

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Room-temperature operating means a profound reduction of volume, power consumption, and cost for infrared (IR) photodetectors, which promise a wide range of applications in both military and civilian areas, including individual soldier equipment, automatic driving, etc. Inspired by this fact, since the beginning of 1990s, great efforts have been made in the development of uncooled thermal detectors. During the last two decades, similar efforts have been devoted using IR photon detectors, especially based on photovoltaic effects. Herein, the proven technologies, which have been commercialized with a large format, like InGaAs/InP pin diodes, InAsSb barrier detectors, and high-operating-temperature HgCdTe devices, are reviewed. The newly developed technology is emphasized, which has shown unique superiority in detecting mid-wavelength and long-wavelength IR signals, such as quantum cascade photodetectors. Finally, brand-new concept devices based on 2D materials are introduced, which are demonstrated to provide additional degrees of freedom in designing and fabricating room-temperature IR devices, for example, the construction of multi-heterojunctions without introducing lattice strain, the convenient integration of optical waveguides and electronic gratings. All information provided here aims to supply a full view of the progress and challenges of room-temperature IR detectors.has its own IR radiation characteristic which contains a wealth of information. For thousands of years, people have studied the visible light as the sensory spectrum of the human eye is only 380-740 nm. But for the invisible IR, people did not know it until the British astronomer Herschel discovered it with a blackened mercury thermometer over 200 years ago, since then the IR technology had developed slowly because people were not aware of the importance of IR in the next 100 years. [1,2] During World War II, PbS IR detectors for the first time were applied on battleships as a "top-secret" instrument, thus people began to focus research on IR technology. In comparison with visible, IR technology has unique characteristics:better environmental adaptability, stronger anti-interference ability, and higher resolution capability. With advantages of working at night or in harsh weather, transmitting information securely, and identifying the camouflaged target accurately, the IR detectors have been researched and widely applied in military, national defense, bioscience, and other momentous fields. [3][4][5] In the historical development of IR photo detectors, the response spectral is being extended to longer wavelengths; the pixels of imaging have been expanded from single element to tens of millions; the operating temperatures of cooled IR detectors are being increased to be closer to room temperature. [6][7][8] Nowadays, the remote IR imaging becomes clearer; the noise-equivalent temperature difference (NETD) of IR detection systems can reach 10 mK [9] or even lower; and IR detection systems become more and more integrated. [10] However, most high-...

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Room-Temperature Single-Photon Detector Based on Single Nanowire

Cited by 49 publications

References 42 publications

WSe₂ Photovoltaic Device Based on Intramolecular p–n Junction

WSe₂ Photovoltaic Device Based on Intramolecular p–n Junction

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

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Room-Temperature Single-Photon Detector Based on Single Nanowire

Cited by 49 publications

References 42 publications

WSe2 Photovoltaic Device Based on Intramolecular p–n Junction

WSe2 Photovoltaic Device Based on Intramolecular p–n Junction

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

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Product

Resources

About

WSe₂ Photovoltaic Device Based on Intramolecular p–n Junction

WSe₂ Photovoltaic Device Based on Intramolecular p–n Junction