2019
DOI: 10.1002/smll.201904396
|View full text |Cite
|
Sign up to set email alerts
|

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Abstract: Room-temperature operating means a profound reduction of volume, power consumption, and cost for infrared (IR) photodetectors, which promise a wide range of applications in both military and civilian areas, including individual soldier equipment, automatic driving, etc. Inspired by this fact, since the beginning of 1990s, great efforts have been made in the development of uncooled thermal detectors. During the last two decades, similar efforts have been devoted using IR photon detectors, especially based on ph… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
73
0
1

Year Published

2019
2019
2021
2021

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 96 publications
(75 citation statements)
references
References 117 publications
1
73
0
1
Order By: Relevance
“…Ferroelectric materials are often used in UV detection for regulating the distribution of photogenerated carriers, for example, the combination of UV‐response ZnO and self‐polarized BaTiO 3 164. The ferroelectric localized field introduced by common ferroelectric films depletes those defect/trap‐induced carriers and decreases dark current 165–167. In a heterojunction, the ferroelectric field can modulate the junction energy band so that the transport and separation of photogenerated carriers are efficiently promoted.…”
Section: Heterojunction Integration For Uv Pdsmentioning
confidence: 99%
“…Ferroelectric materials are often used in UV detection for regulating the distribution of photogenerated carriers, for example, the combination of UV‐response ZnO and self‐polarized BaTiO 3 164. The ferroelectric localized field introduced by common ferroelectric films depletes those defect/trap‐induced carriers and decreases dark current 165–167. In a heterojunction, the ferroelectric field can modulate the junction energy band so that the transport and separation of photogenerated carriers are efficiently promoted.…”
Section: Heterojunction Integration For Uv Pdsmentioning
confidence: 99%
“…2D materials including graphene, transition metal dichalcogenides (TMDs), and black phosphorus (BP) with atomic thickness, high carrier mobility, and tunable bandgap have tremendous potential as the promising building blocks for the future electronic and optoelectronic devices . Graphene, as the pioneer of 2D materials, has exhibited abundant physical and chemical properties .…”
Section: Introductionmentioning
confidence: 99%
“…We also investigated the sensitivity of the device as a function of light wavelength, as shown in Figure d. Significantly, the device shows an ultrawide spectral response ranging from 300 to 1800 nm, which has surpassed the limitation for conventional Si‐based photodiode (<1100 nm), and is comparable to previous TMDC‐based heterojunctions . UV–vis–IR absorption spectrum of the FL‐MoTe 2 /Si also reveals a strong absorption at near‐infrared (NIR) wavelength range of 1200–1800 nm (Figure e).…”
Section: Resultsmentioning
confidence: 75%