A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors

Abstract

2D layered materials are an emerging class of low-dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high-performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow-bandgap noble metal dichalcogenide (PtS 2 ) is demonstrated in this study. The few-layer PtS 2 field-effect transistor exhibits excellent electronic mobility exceeding 62.5 cm 2 V −1 s −1 and ultrahigh on/off ratio over 10 6 at room temperature. The temperature-dependent conductance and mobility of few-layer PtS 2 transistors show a direct metal-to-insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS 2 photo detectors with broadband photodetection from visible to mid-infrared and a fast photoresponse time of 175 µs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble-metal dichalcogenides to be applied in high-performance electronic and mid-infrared optoelectronic devices.

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

“…Due to atomic layer thickness, high mobility, adjustable bandgap, and high chemical stability, various narrow‐bandgap 2D materials, such as graphene, [ 11,12 ] noble metal dichalcogenides (Pd, Pt), [ 13,14 ] black phosphorus (BP), [ 15,16 ] and black arsenic phosphorus (b‐AsP) [ 17 ] have attracted wide attention and been extensively investigated. Graphene, which possesses zero‐bandgap or small bandgap modulated by chemical doping, provides a promising alternative solution for MWIR and long‐wavelength infrared (LWIR) photodetectors.…”

Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

“…In the past decade, free‐space photodetectors based on 2DMs have attracted a lot of attention [ 258–268 ] and the related work has been summarized in several Review Articles. [ 123,269–273 ] As for integrated photonic circuits, waveguide‐integrated photodetectors based on 2DMs are vital components, which possess several specific advantages.…”

“…In the past decade, free-space photodetectors based on 2DMs have attracted a lot of attention [258][259][260][261][262][263][264][265][266][267][268] and the related work has been summarized in several Review Articles. [123,[269][270][271][272][273] As for integrated photonic circuits, waveguide-integrated Figure 12.…”

Research development of 2D materials based photodetectors towards mid‐infrared regime

“…Figure 4B summarizes the typical responsivity and speed of different materials based photodetectors working in different wavelengths reported in literatures. [ 24,25,30,38,40,50,52,54,60,64–67,70,73,79–83 ] It can be concluded from the figure that it is still challenging to achieve both high photoresponsivity and fast photodetection in the device simultaneously. To enhance the overall device performance of 2D materials based photodetectors, researchers need to consider many factors including materials electronic bandgap, optical absorption ability, and band structure design that benefits both efficient and fast extraction of charge carriers.…”