Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Wu, Jianghong; Ma, Hui; Yin, Peng; Ge, Yanqi; Zhang, Yupeng; Li, Lan; Zhang, Han; Lin, Hongtao

doi:10.1002/smsc.202000053

Cited by 74 publications

(57 citation statements)

References 363 publications

(541 reference statements)

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“…[ 2 , 3 ] Considering the ideal design criteria for the modern MA materials including lightweight, low thickness, and broad absorbing, the 2D materials with a large surface area and a high attenuation capability are very attractive candidate absorbents. [ 4 , 5 ] In particular, the transition metal carbide MXene represented by Ti 3 C 2 T x with a high conductivity and polarization loss has been proved to possess enormous efficiency in microwave shielding. [ 1 , 6 ] However, the extremely large permittivity induced poor impedance matching renders MXene material overwhelmingly reflective feature to the incident microwave, even in the forms of foam or aerogel.…”

Section: Introductionmentioning

confidence: 99%

A Robust Hierarchical MXene/Ni/Aluminosilicate Glass Composite for High‐Performance Microwave Absorption

Luo

Wang

et al. 2021

Advanced Science

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The 2D titanium carbide MXene with both extraordinary electromagnetic attenuation and elastic properties has shown great potential as the building block for constructing mechanically robust microwave absorbing composites (MACs). However, the weak thermal stability has inhibited the successful incorporation of MXene into the inorganic MACs matrix so far. Herein, an ultralow temperature sintering strategy to fabricate a hierarchical aluminosilicate glass composite is demonstrated by using EMT zeolite as starting powder, which can not only endow the composites with high sinterability, but also facilitate the alignment of MXene in the glass matrix. Accordingly, the highly oriented MXene and mesoporous structure can effectively reduce the conduction loss in the out‐of‐plane direction while maintaining its large polarization loss. Meanwhile, the in situ formed Ni nanoparticles via ion exchange serve as a synergistic modulator to further improve the attenuation capability and impedance matching of composite, resulting in a low reflection loss of −59.5 dB in X band and general values below −20 dB with a low fitting thickness from 4 to 18 GHz. More attractively, such a delicate structure also gives the composite a remarkable fracture strength and contact‐damage‐resistance, which qualifies the mesoporous glass composite as a structural MACs with a superior comprehensive performance.

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Section: Introductionmentioning

confidence: 99%

A Robust Hierarchical MXene/Ni/Aluminosilicate Glass Composite for High‐Performance Microwave Absorption

Luo

Wang

et al. 2021

Advanced Science

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“…2D materials have received much more attention as Q-switcher, [1] photonic circuit, [2] and mode-locking [3] devices in recent years due to their striking nonlinear optical (NLO) properties. These devices are designed based on saturable absorption (SA), [4] which can be described phenomenally as an increase in transmission with the pump intensity.…”

Section: Introductionmentioning

confidence: 99%

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Luo

Yang

et al. 2021

Adv Materials Inter

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and modulation depth (MoS 2 ≈ 12.7%) [7] in the early time. Different from group-VI TMDs, ReS 2 as a group-VII TMDs is a direct bandgap (≈1.5 eV) semiconductor in both monolayer and bulk crystal. [8] Meanwhile, ReS 2 demonstrates high stability, reasonable carrier mobility (≈30 cm 2 •V −1 s −1 ), [9] and high current on/ off ratio (≈10 6 ). [8] However, ReS 2 shows poor NLO response such as low SA coefficients (−5.99 cm GW −1 ) [1] and modulation depth (≈3%), [10] which severely hinders its application in ultrafast laser. [6,11] Recently, some 2D ReS 2 based van der Waals (vdW) heterostructures such as ReS 2 /MoS 2 , [12] ReS 2 /ReSe 2 , [13] ReS 2 /WSe 2 , [14] and ReS 2 / Graphene [15] have been constructed to improve linear optoelectronic devices [16] such as photodetectors, field-effect transistors, and solar cells, owing to their synergistic effect in the heterostructures. However, few NLO experiments have been demonstrated in ReS 2 based heterostructures. The influence of band alignment on NLO response still need to be unveiled.Bi 2 S 3 can be an elementary component for vdW heterostructure due to its high figure of merit (FOM ≈6.17 × 10 −14 esu cm), [17] environmental stability, excellent absorption coefficient (≈10 5 cm −1 ), [18] and tunable bandgap (from 1.28 to 1.84 eV [19][20] ). Furthermore, Bi 2 S 3 demonstrates relatively high SA coefficient (−63.38 cm GW −1 ) [17] and modulation depth (≈5.7%). [21] Complementarity in Bi 2 S 3 and ReS 2 would promise the heterostructure of Bi 2 S 3 and ReS 2 for "one plus one greater than two" NLO properties. Unlike traditional bonded heterostructures, these 2D vdW heterostructures can be easily integrated without lattice-matching limitation. [22] However, most vdW heterostructures are constructed by mechanical stacking or physical transfer process, which are not scalable for practical applications. [23] Besides, early methods may result in uncontrollable stacking orientation and unavoidable contamination in the transfer process. [24] Some recent reports of two-step vdW vapor epitaxial growth provide an opportunity towards scalable integration of 2D materials. [25,26] Importantly, the vdW vapor epitaxial growth shows the advantages: (I) efficient control in size and convenient growth in scale; (II) atomic uniformity at the interface; (III) layer-by-layer formation without alloys; (IV) compatibility with the current industrial technology. Even though Sb 2 Se 3 /WS 2 , [27] Bi 2 S 3 /MoS 2 , [28] and SnSe 2 /MoS 2 [24] have been successfully demonstrated by vdW vapor epitaxial growth, there is no report on the Bi 2 S 3 /ReS 2 , to our best knowledge. 2D van der Waals (vdW) heterostructure provides a novel platform to modulate linear and nonlinear optical (NLO) properties for optical devices by interface engineering. However, NLO properties and mechanisms based on vdW heterostructures are far from complete understanding. Herein, two-step vdW vapor epitaxial growth by either physical or chemical vapor deposition methods is successfully demonstrated to synthesize unifor...

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“…Firstly, the control of light (direction, polarization, phase, etc.) by means of functional devices typically require the definition of complex architecture matching materials with different optical responses, for instance, plasmonic and/or dielectric nanostructures [74]. The integration of Xenes adds an extra-level of complexity in the design step of such a kind of devices because of the intrinsic limitations related to their synthesis and handling [26].…”

Section: Xenes For Photonicsmentioning

confidence: 99%

“…Lastly, similar to TMDs [75][76][77][78], Xenes represent ideal materials where to test the fine-tuning control of the optoelectronic properties by applying external strain or controlled morphological modifications. In this scenario, both experimental and theoretical studies may have dramatic implications in the development of new technological platforms for flexible photonics and quantum communication technologies [74].…”

Section: Xenes For Photonicsmentioning

confidence: 99%

The Rise of the Xenes: From the Synthesis to the Integration Processes for Electronics and Photonics

Grazianetti

Martella

2021

Materials

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The recent outcomes related to the Xenes, the two-dimensional (2D) monoelemental graphene-like materials, in three interdisciplinary fields such as electronics, photonics and processing are here reviewed by focusing on peculiar growth and device integration aspects. In contrast with forerunner 2D materials such as graphene and transition metal dichalcogenides, the Xenes pose new and intriguing challenges for their synthesis and exploitation because of their artificial nature and stabilization issues. This effort is however rewarded by a fascinating and versatile scenario where the manipulation of the matter properties at the atomic scale paves the way to potential applications never reported to date. The current state-of-the-art about electronic integration of the Xenes, their optical and photonics properties, and the developed processing methodologies are summarized, whereas future challenges and critical aspects are tentatively outlined.

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Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Cited by 74 publications

References 363 publications

A Robust Hierarchical MXene/Ni/Aluminosilicate Glass Composite for High‐Performance Microwave Absorption

A Robust Hierarchical MXene/Ni/Aluminosilicate Glass Composite for High‐Performance Microwave Absorption

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

The Rise of the Xenes: From the Synthesis to the Integration Processes for Electronics and Photonics

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Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Cited by 74 publications

References 363 publications

A Robust Hierarchical MXene/Ni/Aluminosilicate Glass Composite for High‐Performance Microwave Absorption

A Robust Hierarchical MXene/Ni/Aluminosilicate Glass Composite for High‐Performance Microwave Absorption

Facile Two‐Step van der Waals Epitaxial Growth of Bi2S3/ReS2 Heterostructure with Improved Saturable Absorption

The Rise of the Xenes: From the Synthesis to the Integration Processes for Electronics and Photonics

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Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption