Though the implementation of the Tate pairing is commonly believed to be computationally more intensive than other cryptographic operations, such as ECC point multiplication, there has been a substantial progress in speeding up the Tate pairing computations. Because of their inherent parallelism, the existing Tate pairing algorithms are very suitable for hardware implementation aimed at achieving a high operation speed. Supersingular elliptic curves over binary fields are good candidates for hardware implementation due to their simple underlying algorithms and binary arithmetic. In this paper we propose efficient Tate pairing implementations over binary fields F 2 239 and F 2 283 via FPGA. Though our field sizes are larger than those used in earlier architectures with the same security strength based on cubic elliptic curves or binary hyperelliptic curves, fewer multiplications in the underlying field are required, so that the computational latency for one pairing can be reduced. As a result, our pairing accelerators implemented via FPGA can run 15-to-25 times faster than other FPGA realizations at the same level of security strength, and at the same time achieve lower product of latency by area.
Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In
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S
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quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In
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S
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QDs with excellent crystal quality. The properties of the as-prepared In
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QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 10
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Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.
High performance mid‐infrared photodetectors play an irreplaceable role in optical communication, security monitoring, biological, and medical imaging and so on. Two‐dimensional (2D) materials have demonstrated great potential for infrared photodetection application. In recent years, the research on 2D materials based mid‐infrared photodetectors has underwent a fast growth. In this review, we summarize recent advances in the 2D materials based photodetectors, with an emphasis on mid‐infrared photodetection. In the first section, we start with a brief discussion on the potential advantages of 2D materials for mid‐infrared photodetection. Next, we focus on the development of 2D mid‐infrared photodetectors, and then discuss the challenges of this rapidly‐growing field. Following this, we review the solutions for improving the device performances and point out the issues remained to be solved. Finally, the future directions in this area are discussed and general advices are provided for the future development of high‐performance mid‐infrared photodetectors based on 2D materials.
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