Ultrahigh Speed and Broadband Few‐Layer MoTe<sub>2</sub>/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

Lu, Zhijian; Xu, Yan; Yu, Yongqiang; Xu, Kewei; Mei, Jie; Xu, Guangqing; Ma, Yuanming; Wu, Di; Jie, Jiansheng

doi:10.1002/adfm.201907951

Cited by 141 publications

(123 citation statements)

References 58 publications

Supporting

Mentioning

115

Contrasting

Order By: Relevance

“…The higher responsivity to 980 nm resulted from the relatively intensive absorption of the Ag 2 HgS 2 SCRs at longer wavelengths, as shown in Figure 4a The high responsivity means the high ability of converting incident light into photocurrent, showing the perspective for weak light detection. [42] To determine the capability of the device to detect the weak light, the I-V curves (Figure 5g) were detected using different light intensities typically in the range of 0.170 µW cm −2 to 84.9 mW cm −2 , showing a strong dependence on the incident light power. In detail, the photocurrent and the incident light power can be fitted using power law as P I P ∼ θ .…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Wang

You

et al. 2021

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

their ternary alloys, typically including CdTe, [5] HgCdTe, [6,7] InAs, [8,9] InAsSb, and InGaAs, [10][11][12][13] were proved to be the most promising infrared materials, and most of them have already been utilized in various aspects for photodetections commercially. [14,15] Generally, the light power of the common infrared radiation is relatively low from the traditional infrared materials, which would be less effective in most cases for weak light detection in infrared regions. So, it is highly necessary to find out possible new candidates for photodetection of weak infrared light sensitively.Ag 2 HgS 2 exists naturally as a stable mineral known as imiterite with monoclinic phase, which was first discovered in Morocco in 1985. [16] However, it was only fabricated till 2002 via the initially successful solvothermal synthesis at 180−200 °C for long reaction time (5 days) while the samples were only picked up from the mixture with the corresponding endmembers of Ag 2 S and HgS. [17] Thereafter, Ag 2 HgS 2 powders with diameters of ≈200 nm were obtained via a similar process with some modifications of precursors along with their feedstocks [18] and they were also fabricated via a microwave-assisted solvothermal route, in which the reaction system was irradiated using 100 W microwave (2450 MHz) for 1 h. [19] Powder samples with granular sizes of ≈200 nm in diameter were not suitable for fabrication of optoelectronic devices conveniently due to the granular Weak-light photodetection shows considerable potential in both theoretical and technical aspects while it would be a key issue to explore new candidate materials for practical application in view of high reliability and durability of the devices under ambient conditions. In this work, Ag 2 HgS 2 single crystal rods (SCRs) with length up to 1.2 cm and width ranging from 10 to 200 µm are successfully fabricated in pure phase via facile solvothermal process at 200 °C for 24 h for the first time. The Ag 2 HgS 2 SCRs are technically investigated, and the study reveals that they are in high quality via the determination of their crystal structure, morphology, and optical properties. Density functional theory (DFT) calculations are carried out to explore more reliably details on the band structure of bulk Ag 2 HgS 2 . Meanwhile, a series of photodetectors based on the individual Ag 2 HgS 2 SCRs are fabricated, and they convey sensitive responses to a 0.170 µW cm −2 weak light and unanimous responses to incident light with different wavelengths from 254 to 980 nm. In addition, the devices show excellent detecting performances without any obvious slump after the Ag 2 HgS 2 SCRs exposed in air over 18 months.Recently, the exploration of new kinds of infrared light mate-

show abstract

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Wang

You

et al. 2021

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…Meanwhile, the accumulation region with a high conductivity is formed in MoTe 2 layer at equilibrium state. [ 35 ] The Fermi level energy E F is about −4.1 eV for Si and −4.5 eV for MoTe 2 . Due to the Fermi level energy in silicon is higher than that in MoTe 2 , electrons flow from Si to MoTe 2 layer and holes flow from MoTe 2 layer to Si when they are connected to form vdWs heterostructure.…”

Section: Resultsmentioning

confidence: 99%

“…In this regard, the MoTe 2 /Si vdWs heterostructure‐based photodiodes have been fabricated, the photoresponse characteristics of the device demonstrated a high responsivity of 0.19 A W −1 , a large detectivity of 6.8 × 10 13 Jones, and a wide response spectrum spanning from 300 to 1800 nm. [ 35 ]…”

Section: Introductionmentioning

confidence: 99%

Ultrasensitive and Broadband All‐Optically Controlled THz Modulator Based on MoTe₂/Si van der Waals Heterostructure

Qiao

Wang

et al. 2020

Advanced Optical Materials

View full text Add to dashboard Cite

Despite the impressive progresses in terahertz (THz) sources and detection, there is still a big challenge for high performance active optoelectronic THz devices such as THz modulators. All‐optically controlled THz modulators with large modulation depth (MD) and wide modulation bandwidth are of great importance for the THz technology. Herein, a MoTe2/Si van der Waals (vdWs) heterostructure is rationally designed as all‐optical THz modulator by taking advantage of their similar band alignment and easy integration with Si complementary metal‐oxide‐semiconductor (CMOS). The MoTe2/Si modulator presents an ultrasensitive THz modulation performance with a MD of 99.9% under a low illumination power of 300 mW at 1064 nm. This is a record MD for TMDCs‐based all‐optically controlled THz modulators to date. Moreover, the MoTe2/Si modulator exhibits broadband modulation performance with a wide frequency range from 0.3 to 2.0 THz. The high modulation performance under low illumination power is beneficial for practical application with low energy consumption and easy heat dissipation, which is advantageous to modulator chip. This work validates a facile protocol for fabricating high performance THz modulators and paves the way for their practical applications in THz technology.

show abstract

“…Because of their large specific surface area and atomic‐scale thickness, 2D MTACs have attributed wide attention in the field of photodetector, especially for the infrared detection. [ 264–267 ] The evaluation of the performance parameters for the photodetectors mainly includes the following aspects: test wavelength, responsivity, detectivity ( D *), response time and detection range which are listed in Table 5 for some 2D MTACs‐based photodetectors. In addition, the mechanisms of photoelectric conversion process are mainly divided into four types: photoconductive effect, photogating effect, photothermoelectric effect and photovoltaic effect.…”

Section: Applicationsmentioning

confidence: 99%

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

Tao

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Atom‐thick 2D metal telluride atomic crystals (2D MTACs) display many fascinating physical properties for potential applications in multiple fields. In this review, recent advances in the preparation, physical properties and applications of 2D MTACs are presented. First, three kinds of the most available preparation methods for 2D single crystal MTACs have been summarized, including single crystal‐based mechanical exfoliation, molecular beam epitaxy, and chemical vapor deposition. Second, the recent progress on abundant physical properties of 2D MTACs is briefly introduced, including surface electronic properties, optoelectronic properties, electronic transport, and thermoelectric properties, ferroelectric properties, superconducting properties, and ferromagnetic properties. Third, the potential electronics, spintronics, optoelectronics and energy applications of 2D MTACs are presented. Finally, some significant challenges and opportunities in 2D MTACs are briefly addressed.

show abstract

Ultrahigh Speed and Broadband Few‐Layer MoTe₂/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

Cited by 141 publications

References 58 publications

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Ultrasensitive and Broadband All‐Optically Controlled THz Modulator Based on MoTe₂/Si van der Waals Heterostructure

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

Contact Info

Product

Resources

About

Ultrahigh Speed and Broadband Few‐Layer MoTe2/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

Cited by 141 publications

References 58 publications

Low‐Temperature Growth of High‐Quality Ag2HgS2 Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Low‐Temperature Growth of High‐Quality Ag2HgS2 Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Ultrasensitive and Broadband All‐Optically Controlled THz Modulator Based on MoTe2/Si van der Waals Heterostructure

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

Contact Info

Product

Resources

About

Ultrahigh Speed and Broadband Few‐Layer MoTe₂/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Ultrasensitive and Broadband All‐Optically Controlled THz Modulator Based on MoTe₂/Si van der Waals Heterostructure