Photodetectors (PDs), as an indispensable component in electronics, are highly desired to be flexible to meet the trend of next‐generation wearable electronics. Unfortunately, no in‐depth reviews on the design strategies, material exploration, and potential applications of wearable photodetectors are found in literature to date. Thus, this progress report first summarizes the fundamental design principles of turning “hard” photodetectors “soft,” including 2D (polymer and paper substrate‐based devices) and 1D PDs (fiber shaped devices). In short, the flexibility of PDs is realized through elaborate substrate modification, material selection, and device layout. More importantly, this report presents the current progress and specific requirements for wearable PDs according to the application: monitoring, imaging, and optical communication. Challenges and future research directions in these fields are proposed at the end. The purpose of this progress report is not only to shed light on the basic design principles of wearable PDs, but also serve as the roadmap for future exploration in wearable PDs in various applications, including health monitoring and Internet of Things.

Self‐powered ultraviolet (UV) photodetectors, which have vast applications in the military and for civilian purposes, have become particularly attractive in recent years due to their advantages of high sensitivity, ultrasmall size, and low power consumption. In particular, self‐powered UV photodetectors driven by a built‐in electric field cannot only detect UV signals but also be powered by the incident signals instead of external power. In this concept, the key issues and most recent developments on photovoltaic type UV photodetectors driven by p–n homojunction, heterojunction, and Schottky junction are surveyed. This should generate extensive interest in this field and encourage more researchers to engage in and tackle the scientific challenges.

Ultraviolet photodetectors (UV PDs) with "5S" (high sensitivity, high signal-tonoise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize highperformance UV PDs, heterojunctions are created to form a built-in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice-matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.

Encouraged by the increasing requirements of intelligent equipment, silicon integrated circuit–compatible photodetectors that support single‐chip photonic–electronic systems have gained considerable progresses. Advanced materials have resulted in enhanced device performance based on traditional photovoltaic effect and photoconductive effect, and novel device designs have catalyzed new working mechanisms combing rapid photoresponse and high responsivity gain. Surprising applications are developed using monolithic photonic–electronic platforms, and the developing integration strategies keep pace with the developing complementary metal‐oxide‐semiconductor techniques as well as nonsilicon substrates. Here, the recent developments in silicon‐compatible photodetectors, both in device advances and their integration routes, are reviewed. Meanwhile, the progresses, challenges, and possible future directions in this field are discussed and concluded.

A gold-induced NHCl-assisted vapor-based route is proposed and developed to achieve vertically aligned submicron Se crystals on lattice-matched (111)-oriented silicon substrates, based on which a high-performance large-area silicon-compatible photodetector is constructed. Thanks to the energy band structure and the strongly asymmetrical depletion region, the fabricated Se/Si device maintains a similar wavelength cutoff to that of selenium devices before the IR region, along with a high-performance broadband photoresponse in the UV-to-visible region. The large-area photodetector maintains a very low leakage current under a -2 V bias, and a high on/off ratio of 10-10 is obtained with a high photocurrent of 62 nA at 500 nm. A photoresponse is clearly observed when the bias voltage is removed. The pulse response precisely provides a high response speed (τ + τ ≈ 1.975 ms), exceeding the fastest Se-based photodetectors in current reports. The enhanced photoelectric properties and the self-power photoresponse mainly derive from the integrated high-quality Se/n-Si p-n heterojunctions with both lattice match and type II energy band match.

Multiband detection has always been a challenge and has drawn much attention in the development of photodetectors (PDs). Herein, we present controllable synthesis of SnO 2 wires with different sizes via chemical vapor deposition and formed composites with CsPbBr 3 particles to realize dual spectral response. We constructed PDs based on a single SnO 2 millimeter wire decorated with CsPbBr 3 particles (SnO 2 MMW/CsPbBr 3 ), which showed a stepped spectrum, fast response speed, and self-powered function. Meanwhile, SnO 2 microwires/CsPbBr 3 composites (SnO 2 MWs/CsPbBr 3 ) were also utilized to fabricate PDs. It is noteworthy that detection occurred in two different wavelength bands (320 and 520 nm) with equivalent intensity at a bias of 0 V. The self-powered feature of this device comes from the built-in electric field at the interface of SnO 2 /CsPbBr 3 , and the dual-color response originates from asymmetric junction barriers between conduction bands of SnO 2 and CsPbBr 3 . This work demonstrated promising self-powered PDs that are capable of multiband detection.

2D perovskites, due to their unique properties and reduced dimension, are promising candidates for future optoelectronic devices. However, the development of stable and nontoxic 2D wide‐bandgap perovskites remains a challenge. 2D all‐inorganic perovskite Sr2Nb3O10 (SNO) nanosheets with thicknesses down to 1.8 nm are synthesized by liquid exfoliation, and for the first time, UV photodetectors (PDs) based on individual few‐layer SNO sheets are investigated. The SNO sheet‐based PDs exhibit excellent UV detecting performance (narrowband responsivity = 1214 A W−1, external quantum efficiency = 5.6 × 105%, detectivity = 1.4 × 1014 Jones @270 nm, 1 V bias), and fast response speed (trise ≈ 0.4 ms, tdecay ≈ 40 ms), outperforming most reported individual 2D sheet‐based UV PDs. Furthermore, the carrier transport properties of SNO and the performance of SNO‐based phototransistors are successfully controlled by gate voltage. More intriguingly, the photodetecting performance and carrier transport properties of SNO sheets are dependent on their thickness. In addition, flexible and transparent PDs with high mechanical stability are easily fabricated based on SNO nanosheet film. This work sheds light on the development of high‐performance optoelectronics based on low‐dimensional wide‐bandgap perovskites in the future.

higher carrier mobility and longer carrier lifetime, thanks to their fewer grain boundaries, enhanced crystallinity and reduced trap density. With such performance improvements, the lead-free halide perovskite single crystal is considered to be a promising photosensitive material in optoelectronic devices. [6] In order to effectively promote power conversion efficiency, the thickness of leadfree halide perovskite single crystal should be controlled at a suitable level, which is suggested to be greater than light-absorption length and less than carrier-diffusion length. [7] In the current semiconductor and photoelectronic industries, thin silicon wafers are fabricated mainly through top-down process, which requires high yields accompanied with large material loss, waste and subsequent complicated slicing process. Against this background, a facile and effective space-confined fabrication is adopted to produce large singlecrystalline thin film, through a bottom-up process. [8] Compared with vapor epitaxial growth and cavitation triggered asymmetrical crystallization, [9] space-confined methods possess moderate growth conditions to grow SCTF without rigorous restrictions. However, this method is limited to the growth of organic-inorganic lead halide perovskite SCTF, few studies focus on lead-free halide perovskite SCTF, such as Sn-based, Bi-based and Sb-based, etc. This is limited by the lack of understanding of the precursor solution chemistry in space-confined method. [10] Although previous work pointed out that the preheated-substrate and local heating are important in the space-confined growth, [11] there is a lack of investigation on the influence of the precursor solution temperature on the crystallization process. In general, the growth drive force of the space-confined growth is considered to be inverse-temperature crystallization or solvent evaporation, in which the supersaturation plays a key role in controlling size and quality. [12] An indepth insight of the relationship between the nucleation and crystallization process in the precursor solution is of significant importance. Therefore, it is necessary to clarify the effects of supersaturation in the space-confined growth.Furthermore, the space-confined method demonstrates the advantage of substrate-independent characteristics, which facilitate convenient integration of lead-free halide perovskite SCTF Monolithical integration of the promising optoelectronic material with mature and inexpensive silicon circuitry contributes to simplifying device geometry, enhancing performance, and expanding new functionalities. Herein, a leadfree halide perovskite Cs 3 Bi 2 I 9 single-crystalline thin film (SCTF), with thickness ranging from 900 nm to 4.1 µm and aspect ratio up to 1666, is directly integrated on various substrates including Si wafer, through a facile and lowtemperature solution-processing method. The growth kinetics of the lead-free halide perovskite SCTF are elucidated by in situ observation, and the solution supersaturation is controlled to reduce the ...