An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

Abstract

investigated in the past few years. [11][12][13][14][15][16] For example, Hu and co-workers fabricated IR detectors based on parallel GaSb NW arrays that exhibited a photosensitivity of 4.5 with rise and decay times of 195.1 and 380.4 µs, respectively. [13] Many of IR detectors have been recently built on various 2D semiconducting nanostructures with varying photosensitivities, response speeds, etc. However, the performance of such devices, especially in terms of photosensitivity, is still quite low and cannot meet practical requirements. [17][18][19] To enhance the photosensitivity and enable the performance to reach a suitable level for commercial IR detector and imaging systems, [20] external amplification circuits are often utilized to improve the processing efficiency and image recognition rate. [21,22] However, the complex circuits of such IR systems, including IR detectors, external amplifiers, and processing units, introduce challenges with respect to power consumption, device integration, and noise processing. Therefore, new and highly compacted integrated IR systems with on-chip amplifying units are highly desirable for large-scale implementation and fault-tolerant processing in IR imaging.In this work, a simple and highly integrated IR detection amplification (IRDA) system was designed for high-performance IR imaging applications. A Ga-doped In 2 O 3 NW-based field effect transistor (FET) was integrated into a flexible all-NW IRDA system, and was found to enhance the photosensitivity of the system by several orders of magnitude. The resulting system exhibited a high photosensitivity, external quantum efficiency (EQE), and detectivity under 1342 nm light irradiation, with values as high as 7.6 × 10 4 , 1508%, 4.9 × 10 12 Jones, respectively. Furthermore, the contrast imaging of 1342 nm IR light in a 10 × 10 device array was significantly improved by integrating the IRDA system. As a proof-of-concept, the IRDA system array is used here to increase the accuracy and processing efficiency of subsequent image recognition by artificial neural network (ANN) training. These results suggest that an all-NW based IRDA system has significant potential for application in future flexible IR imaging technologies.Visual perception is an important part of human perception, providing an essential bridge between human beings and external information. [23] To simulate and expand the functionality of human vision, it is critical to obtain clear image information. Generally, the human retina detects visual Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art lowdimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA)...

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