Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Z. Q.; Lü, Wei

doi:10.1038/srep09389

Cited by 25 publications

(18 citation statements)

References 24 publications

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“…6 Of particular interest are RTDs with embedded quantum dots operated as single photon detectors and photon counters, [7][8][9][10] or high-gain RTD photodetectors for room temperature telecommunication wavelength light sensing. 11 Hereby, the RTD serves as an internal amplifier of weak electric signals, caused by photogenerated charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Sensitivity of resonant tunneling diode photodetectors

Pfenning¹,

Hartmann²,

Langer³

et al. 2016

Nanotechnology

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We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of 1.3 µm for illumination powers from pico to micro Watts. The sensitivity decreases nonlinearly with power.An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from 5.82 10 A/W to 3.2 A/W. We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole-population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photosensor sensitivity can be assumed constant.

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Section: Introductionmentioning

confidence: 99%

Sensitivity of resonant tunneling diode photodetectors

Pfenning¹,

Hartmann²,

Langer³

et al. 2016

Nanotechnology

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show abstract

“…Moreover, Weng et al . take use of quantum dot coupled resonant tunneling diodes to demonstrate a PNR 81 . Proposed electron-injecting operation may turn photon-switches to OFF state and make the detector ready for multiple-photons detection.…”

Section: Discussionmentioning

confidence: 99%

Quantum computation based on photonic systems with two degrees of freedom assisted by the weak cross-Kerr nonlinearity

Luo

Lai

2016

Sci Rep

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Most of previous quantum computations only take use of one degree of freedom (DoF) of photons. An experimental system may possess various DoFs simultaneously. In this paper, with the weak cross-Kerr nonlinearity, we investigate the parallel quantum computation dependent on photonic systems with two DoFs. We construct nearly deterministic controlled-not (CNOT) gates operating on the polarization spatial DoFs of the two-photon or one-photon system. These CNOT gates show that two photonic DoFs can be encoded as independent qubits without auxiliary DoF in theory. Only the coherent states are required. Thus one half of quantum simulation resources may be saved in quantum applications if more complicated circuits are involved. Hence, one may trade off the implementation complexity and simulation resources by using different photonic systems. These CNOT gates are also used to complete various applications including the quantum teleportation and quantum superdense coding.

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“…Remarkably, the theoretical cut-off frequency of single DBQW-QRTs is limited by the tunneling escape time in the quantum well [44]. As a result, the quantum resonant tunneling effect and NDC characteristic has been exploited in a wide-range of electronic and photonic devices, including THz quantum cascade lasers for gas sensing [46], THz emitters and detectors for imaging [47], and communications beyond 5G (world record oscillation at 1.92 THz [45]), single-photon switches and detectors [48,49], electroluminescence in III-nitride LED sources [50], III-V unipolar bistable QRT [51], bipolar QRT-based LEDs [52][53][54] and lasers [55,56], near-IR photodetectors for optical communications [57], and mid-IR detectors for sensing [58], to name only a few. For neuron computation, early works evoked QRTbased devices as potential nanoelectronic candidates for cellular neural networks as a form of threshold logical gates [59].…”

Section: Introductionmentioning

confidence: 99%

NanoLEDs for energy-efficient and gigahertz-speed spike-based sub-λ neuromorphic nanophotonic computing

2020

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AbstractEvent-activated biological-inspired subwavelength (sub-λ) photonic neural networks are of key importance for future energy-efficient and high-bandwidth artificial intelligence systems. However, a miniaturized light-emitting nanosource for spike-based operation of interest for neuromorphic optical computing is still lacking. In this work, we propose and theoretically analyze a novel nanoscale nanophotonic neuron circuit. It is formed by a quantum resonant tunneling (QRT) nanostructure monolithic integrated into a sub-λ metal-cavity nanolight-emitting diode (nanoLED). The resulting optical nanosource displays a negative differential conductance which controls the all-or-nothing optical spiking response of the nanoLED. Here we demonstrate efficient activation of the spiking response via high-speed nonlinear electrical modulation of the nanoLED. A model that combines the dynamical equations of the circuit which considers the nonlinear voltage-controlled current characteristic, and rate equations that takes into account the Purcell enhancement of the spontaneous emission, is used to provide a theoretical framework to investigate the optical spiking dynamic properties of the neuromorphic nanoLED. We show inhibitory- and excitatory-like optical spikes at multi-gigahertz speeds can be achieved upon receiving exceptionally low (sub-10 mV) synaptic-like electrical activation signals, lower than biological voltages of 100 mV, and with remarkably low energy consumption, in the range of 10–100 fJ per emitted spike. Importantly, the energy per spike is roughly constant and almost independent of the incoming modulating frequency signal, which is markedly different from conventional current modulation schemes. This method of spike generation in neuromorphic nanoLED devices paves the way for sub-λ incoherent neural elements for fast and efficient asynchronous neural computation in photonic spiking neural networks.

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Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection

Cited by 25 publications

References 24 publications

Sensitivity of resonant tunneling diode photodetectors

Sensitivity of resonant tunneling diode photodetectors

Quantum computation based on photonic systems with two degrees of freedom assisted by the weak cross-Kerr nonlinearity

NanoLEDs for energy-efficient and gigahertz-speed spike-based sub-λ neuromorphic nanophotonic computing

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