Nanoscale light sources using metal cavities have been proposed to enable high integration density, efficient operation at low energy per bit and ultra-fast modulation, which would make them attractive for future low-power optical interconnects. For this application, such devices are required to be efficient, waveguide-coupled and integrated on a silicon substrate. We demonstrate a metal-cavity light-emitting diode coupled to a waveguide on silicon. The cavity consists of a metal-coated III–V semiconductor nanopillar which funnels a large fraction of spontaneous emission into the fundamental mode of an InP waveguide bonded to a silicon wafer showing full compatibility with membrane-on-Si photonic integration platforms. The device was characterized through a grating coupler and shows on-chip external quantum efficiency in the 10−4–10−2 range at tens of microamp current injection levels, which greatly exceeds the performance of any waveguide-coupled nanoscale light source integrated on silicon in this current range. Furthermore, direct modulation experiments reveal sub-nanosecond electro-optical response with the potential for multi gigabit per second modulation speeds.

We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

Nanoscale semiconductor lasers have been developed recently using either metal, metallo-dielectric or photonic crystal nanocavities. While the technology of nanolasers is steadily being deployed, their expected performance for on-chip optical interconnects is still largely unknown due to a limited understanding of some of their key features. Specifically, as the cavity size is reduced with respect to the emission wavelength, the stimulated and the spontaneous emission rates are modified, which is known as the Purcell effect in the context of cavity quantum electrodynamics. This effect is expected to have a major impact in the 'threshold-less' behavior of nanolasers and in their modulation speed, but its role is poorly understood in practical laser structures, characterized by significant homogeneous and inhomogeneous broadening and by a complex spatial distribution of the active material and cavity field. In this work, we investigate the role of Purcell effect in the stimulated and spontaneous emission rates of semiconductor lasers taking into account the carriers' spatial distribution in the volume of the active region over a wide range of cavity dimensions and emitter/cavity linewidths, enabling the detailed modeling of the static and dynamic characteristics of either micro-or nano-scale lasers using single-mode rate-equations analysis. The ultimate limits of scaling down these nanoscale light sources in terms of Purcell enhancement and modulation speed are also discussed showing that the ultrafast modulation properties predicted in nanolasers are a direct consequence of the enhancement of the stimulated emission rate via reduction of the mode volume.

We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics.

The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the performance of nanophotonic devices for optical interconnects, namely nanolasers and nanodetectors. This work reports the strong suppression of surface recombination of undoped InGaAs/InP nanostructured semiconductor pillars using a combination of ammonium sulfide, (NH4)2S, chemical treatment and silicon oxide, SiOx, coating. An 80-fold enhancement in the photoluminescence (PL) intensity of submicrometer pillars at a wavelength of 1550 nm is observed as compared with the unpassivated nanopillars. The PL decay time of ∼0.3 μm wide square nanopillars is dramatically increased from ∼100 ps to ∼25 ns after sulfur treatment and SiOx coating. The extremely long lifetimes reported here, to our knowledge the highest reported to date for undoped InGaAs nanostructures, are associated with a record-low surface recombination velocity of ∼260 cm/s. We also conclusively show that the SiOx capping layer plays an active role in the passivation. These results are crucial for the future development of high-performance nanoscale optoelectronic devices for applications in energy-efficient data optical links, single-photon sensing, and photovoltaics.

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Nanoscale light sources are being intensively investigated for their potential to enable low-energy, high-density optical communication and sensing systems. Both nano-lightemitting diodes (nanoLEDs) and nanolasers have been considered, based on advanced nanophotonic concepts such as photonic crystals and plasmonic structures, with dimensions well into the sub-micrometer domain. With decreasing dimensions, lightmatter interaction becomes stronger, potentially leading to efficient and ultrafast radiative emission, both in the spontaneous and stimulated regime. These features have created wide expectations for the practical prospects of such nanoscale light sources, in particular for optical interconnects. In this article we examine the limits to the downscaling of LEDs and lasers, and ask ourselves which type of source is most suited to ultralow-power optical communications. Based on simple physical considerations on the scaling of spontaneous and stimulated emission rates for semiconductor active regions at room temperature, we analyze the speed and energy limits for nanoLEDs and nanolasers as a function of their size. The role of spontaneous emission enhancement (Purcell effect) in practical nanophotonic sources is also revisited. The main conclusion is that nanoLEDs reach a fundamental energy/speed limit for data rates exceeding a few Gb/s, whereas nanolasers with active dimensions in the range of few 100s nm may enable direct modulation rates larger than 40 Gb/s at power levels adequate for short-distance and low-energy optical interconnects.

We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR) region. The resonant tunneling diode photo-detector (RTD-PD) can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD's NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz) modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.