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In this paper, we report the results of investigation of 9.5 µm AlGaAs/GaAs and strain compensated 4.7 µm AlInAs/InGaAs/InP QCLs. We also show the results for 9.5 µm lasers based on lattice matched AlInAs/InGaAs/InP structures. The developed GaAs/AlGaAs lasers show the record pulse powers of 6 W at 77 K and up to 50 mW at 300 K. This has been achieved by careful optimization of the MBE growth process and by applying a high reflectivity metallic coating to the back facet of the laser. The 9.5 µm AlInAs/InGaAs/InP lasers utilize AlInAs waveguide and were grown exclusively by MBE without MOCVD regrowth. The short wavelength, strain compensated QCLs were grown by MOCVD. They represent state‐of‐the‐art parameters for the devices of their design. For epitaxial process control, the atomic‐force microscopy (AFM), high resolution X‐ray diffraction (HR‐XRD) and transmission electron microscopy (TEM) were used to characterize the morphological and structural properties of the layers. The basic electro‐optical characterization of the lasers is provided. We also present results of Green's function modeling of mid‐IR QCLs and demonstrate the capability of non‐equilibrium Green's function (NEGF) approach for sophisticated but still computationally effective simulation of laser's characteristics.

Abstract-A resonant tunnelling diode has been monolithically integrated with an optical communications laser [the resonant tunnelling diode (RTD-LD)] to form a simple optoelectronic integrated circuit (OEIC) that is a novel bistable device suitable for an optical communications system. The RTD-LD was based on a ridge-waveguide laser structure and was fabricated from an InAlGaAs-InP epi-wafer grown by molecular beam epitaxy; it emitted at around 1500 nm. Voltage controlled optical-electrical switching and bistability were observed during the characterisation of the RTD-LDuseful features for a fibre-optic communications laser.Optical and electrical simulations of the RTD-LD were carried out using the circuit simulation tool PSPICE. In addition, a discrete component version of the RTD-LD was constructed which exhibited optical power oscillations, and along with the results of the simulations, gave insight into the operating principles of the monolithically integrated RTD-LD.

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We report on the continuous wave, room temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices, based on the (Al,In)GaN material system, is described. The uncoated devices were mounted into TO packages for characterization and exhibited single wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution limited full-width at half maximum of 6.5 pm.