The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: Ea,micro from the built-in potential in the microscale and Ea,nano related to the thermally assisted tunneling in nanoscale. The activation energies Ea,micro and Ea,nano decrease exponentially and linearly with increasing applied electric field, respectively.
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