Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels

Aninkevičius, V.; Bareikis, V.; Liberis, J.; Matulionis, A.; Sakalas, P.

doi:10.1016/0038-1101(93)90174-o

Cited by 16 publications

(10 citation statements)

References 6 publications

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“…However, in modern InP HEMTs the Γ − L separation in the In x Ga 1−x As channel (0.55 eV at 300 K and x = 0.53 [63]) exceeds the conduction band offset so that RST is expected to occur prior to intervalley transfer. Experimental evidence for this expectation has been reported in AlGaAs/GaAs heterostructures, where noise at intermediate fields-below the threshold for intervalley transfer-is attributed to RST [35].…”

Section: Discussionmentioning

confidence: 89%

“…energy relaxation [28][29][30][31][32][33][34], microwave noise [35,36], and related properties in 2D quantum wells [37][38][39][40][41]. The physical picture of high-field transport obtained from these studies is that electrons are heated by the electric field and lose energy primarily by optical phonon emission.…”

Section: Introductionmentioning

confidence: 99%

“…Microwave noise in semiconductor quantum wells and devices has been previously attributed to RST. For instance, Aninkevicius et al concluded that RST was the origin of noise in an AlGaAs/GaAs heterostructure at 80 K based on the measured dependencies of noise temperature on electric field and conduction band offset, and they further attributed intervalley noise suppression to RST at high fields [35]. In HEMTs, Feng et al attributed drain noise partially to RST [49], although evidence supporting the claim was not provided.…”

Section: Introductionmentioning

confidence: 99%

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Theory of drain noise in high electron mobility transistors based on real-space transfer

Esho

Choi

Minnich

2022

Journal of Applied Physics

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High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the origin of the gate noise, that of drain noise is a topic of debate. Here, we report a theory of drain noise as a type of partition noise arising from real-space transfer of hot electrons from the channel to the barrier. The theory accounts for the magnitude and dependencies of the drain temperature and suggests strategies to realize devices with lower noise figure.

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Section: Discussionmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Theory of drain noise in high electron mobility transistors based on real-space transfer

Esho

Choi

Minnich

2022

Journal of Applied Physics

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“…Hot-electron characteristics of n-type GaAs, including the dependence of fluctuation intensity on the applied electric field, are sensitive to the zero-field mobility [2,4]. A higher mobility causes stronger hot-electron effects.…”

Section: Introductionmentioning

confidence: 99%

“…Also, a stronger dependence of the intensity of drift-velocity fluctuations on the electric field is expected at lower lattice temperatures (the available experimental results [2] confirm this conjecture). This is the reason why the simulations of fluctuation phenomena are performed for liquid-nitrogen lattice temperatures, where some experimental results on the electric-field dependence of noise are available [2,4]. In this paper, we will pay special attention to the effect of doping on the fluctuation and noise properties of GaAs, mainly in the range of applied electric fields below the threshold field for the negative differential mobility.…”

Section: Introductionmentioning

confidence: 99%

Effect of doping on hot-electron fluctuations in GaAs

Zubkute¹,

Matulionis²,

Raguotis³

et al. 2001

Semicond. Sci. Technol.

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We study the effect of doping on hot-electron fluctuation phenomena in gallium arsenide (GaAs). We obtain the noise characteristics of pure and doped n-type GaAs channels at applied electric fields from Monte Carlo simulations of the kinetic processes in the framework of a realistic model of GaAs. We achieve a fit with the available experimental data, and we reveal the effects of inter-electron collisions and the degree of compensation of donors on microwave fluctuation characteristics at heated electric fields. We confirm the sensitivity of nonequilibrium noise phenomena to the presence of inter-electron collisions, though conserving energy and quasi-momentum in the system of electrons.

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Noise, Hot Carrier Effects

Matulionis¹

2007

Wiley Encyclopedia of Electrical and Electronics Engineering

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Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels

Cited by 16 publications

References 6 publications

Theory of drain noise in high electron mobility transistors based on real-space transfer

Theory of drain noise in high electron mobility transistors based on real-space transfer

Effect of doping on hot-electron fluctuations in GaAs

Noise, Hot Carrier Effects

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