Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP

Abstract

The experimental dependence of microwave noise temperature on supplied electric power is used to study hot phonons in an InP-based modulationdoped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As heterostructure with a two-dimensional electron gas channel (n 2D = 2.3 × 10 12 cm −2 ). The effective hot-phonon temperature is extracted for two-subband and six-subband models treated in the electron-temperature approximation. The estimated value for the hot-phonon lifetime with respect to the longitudinal optical phonon conversion into other vibration modes is (0.9 ± 0.3) ps at room temperature.

Fluctuation technique for investigation of ultrafast processes

“…The fluctuation data for different 2D and 3D channels (Fig. 3, open triangle [34], open diamond [32], black diamond [35], black square [6]) find themselves close to the squareroot dependence (solid line) expected for hot-phonon disintegration assisted by plasmons [6,16]. The hypothetic square-root dependence is confirmed by the recent femtosecond pump-probe Raman experiment carried out for GaN bulk crystals at different intensity of the pump excitation [15] (open circles).…”

“…Hot-phonon lifetime at different electron density (or electron-hole plasma density) for 2D channels (closed symbols) and bulk single crystals (open symbols) at room temperature. Fluctuation data for 2D channels: AlGaN / GaN (closed circle [19]), AlInAs / GaInAs / AlInAs (black diamond [35]), AlGaN / AlN / GaN (black square [6]). Fluctuation data for 3D channels: 4H-SiC (open up-triangle [34]) and Si (open diamond [31]).…”

Limitation of Hot-Carrier Generated Heat Dissipation on the Frequency of Operation and Reliability of Novel Nitride-Based High-Speed HFETs

“…Fluctuationbased technique [16] was developed and implemented after careful analysis of different sources of hot-electron fluctuations in voltage-biased 2DEG channels at microwave frequencies [18,19]. The results on hot-phonon lifetime are available for nitride-based 2DEG channels [6,11,16,[20][21][22][23], arsenide-based 2DEG channels [24], SiO 2 /Si/SiO 2 channels [25], and SiC [26]. For recent reviews see [10][11][12][27][28][29].…”

“…(6) if the hot-electron energy relaxation time is measured. The hot-electron energy relaxation time, , can be determined from the noise experiment [18][19][20]: AlInAs/GaInAs/AlInAs [24] AlGaN/AlN/GaN [20] AlInN/AlN/GaN [14] Hot-phonon temperature (K) Hot-electron temperature (K) Figure 6 Experimental dependence of equivalent hot-phonon temperature at room temperature for 2DEG channels located in AlInAs/GaInAs/AlInAs (triangles [24]), AlInN/AlN/GaN (squares \cite [14]), and AlGaN/AlN/GaN (bullets [20]). Line is the hot-electron temperature.…”

“…For illustration, consider experimental data on AlInAs/GaInAs/AlInAs structure with the 2DEG channel confined in the InGaAs layer [24]. This structure demonstrates a weaker coupling inside the hot electron-LO-phonon subsystem, as compared with the GaN structures, and the estimated hot-phonon temperature was up to 30% lower than the hot-electron temperature (Fig.…”