Three new scalarane-based sesterterpenes, 1- 3, were isolated from a marine sponge of the genus Spongia, and their chemical structures were elucidated by analysis of HRMS and 2-D NMR spectra. The isolated compounds 1 and 3 showed inhibition against the farnesoid X-activated receptor (FXR) with IC50 values of 2.4 and 24 microM, respectively. In particular, compound 3 directly inhibited the interaction between FXR and a coactivator peptide (SRC-1) as determined by surface plasmon resonance (SPR) spectroscopy.

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RTS (random telegraph signal)-like fluctuation in GateInduced Drain Leakage (GIDL) current of Saddle-Fin (S-Fin) type DRAM cell transistor was investigated for the first time. Furthermore, two types of fluctuation which have apparently different τ high (average time duration of high leakage state) to τ low (average time duration of low leakage state) ratio were investigated, and it was found that the energy difference between bistable levels is similar to that of the junction leakage.

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Diverse phenomena exist in the ionosphere caused by the presence of dusty plasma objects. These have a bearing on problems of space communication and possibly on the Earth's weather, among others. Therefore, it is very important to study them so that many questions on the subject can be answered. In this paper, the interaction of plasma waves with these objects is studied and some instrumentation to measure such interactions is proposed. In particular, the interaction of ion-sound waves (ISW) by non-soliton and soliton pulses propagating in dusty plasma is investigated. It is shown that inclusions of dusty components of the ionosphere plasma behave as resonators for non-soliton pulses, so that ISW are excited. Korteveg-de Vries (KdV) solitons practically do not resonate with the inclusions of dusty plasma. Instead, the presence of dusty plasma inclusions can lead to the presence of transverse instabilities and the eventual destruction of the KdV solitons.

This paper proposes an equivalent circuit model of 3-D DRAM cell transistors with recess gate and saddle fin structure for the first time. The model effectively characterize the sub-threshold and off margin behavior of the scaled DRAM cell transistor by considering the parasitic sub-channel and vertical transistor components into account. TCAD simulation and experimental data have confirmed the accuracy of the model. With the analysis made, we suggest a set of improvement method for the off margin characteristics engineering. These methods are believed to lead the continuous DRAM scaling, down to sub10nm technology node.

MoS2 layers were prepared by sulfurization at temperatures ranging from 500 °C to 900 °C. Various microscopic analyses confirmed that the different sulfurization treatments altered the nanostructure of the MoS2 layers. Nanostructure alterations and enhanced crystallinity were observed at temperatures exceeding 800 °C. The electrical properties of field-effect transistor devices fabricated from the MoS2 layers were investigated in relation to sulfurization temperature. The field-effect mobility of the MoS2 layers significantly increased with rising sulfurization temperature. The change in nanostructure and the transition to a horizontally aligned microstructure at temperatures over 800 °C were explicitly correlated with the change in field-effect mobility.