RTS-like fluctuation in Gate Induced Drain Leakage current of Saddle-Fin type DRAM cell transistor

Kim³

et al. 2010

Jpn. J. Appl. Phys.

We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxidesemiconductor field-effect transistors (MOSFETs). #

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

Kim³

et al. 2010

Jpn. J. Appl. Phys.

“…The GOBD phenomenon has three stages: development of Trap Assisted Tunneling (TAT) current, soft breakdown (SBD), and hard breakdown (HBD). In [5], the TAT gate leakage current is explained by the T-D model and the trap configuration. The leakage current steadily increases as a function of stress time with increasing numbers of traps.…”

Section: Introductionmentioning

confidence: 99%

The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system

Cha

Microelectronics Reliability

Liu

et al. 2015

In the nanoscale regime, the aggressive scaling of devices is affected by several severe reliability issues, including Negative Bias Temperature Instability (NBTI) and Gate Oxide Breakdown (GOBD). Generally, the mathematical models of NBTI and GOBD are derived from device level test structures with accelerated tests. However, although both models are highly dependent on temperature and the gate voltage and both mechanisms are based on the probability of trap generation in the oxide layer, each model has a different impact on circuit performances. In this paper, we use a physical probability model of trap generation for both mechanisms. We first simulate the impact on circuits using process models involving threshold voltage shifts and gate oxide leakage currents for NBTI and GOBD, respectively. Then, we find a relationship between the model parameters and power/ground signal degradation. We find the stress conditions that make each of the two mechanisms dominant in the power/ground signal. We calibrate the NBTI and GOBD model parameters of each chip to experimental results. Hence, it becomes possible to identify chips that are more or less vulnerable to NBTI and GOBD.

“…Reverse current at the drain junction is one of the most prominent leakage components in MOS transistors. [1][2][3] Thermal generation via electronic states (traps) is the main mechanism for the current in the reverse-based pn junction. [4][5][6] In the drain junction of MOS transistors, most of the states are located at or near the interface between the drain and gate oxide.…”

Section: Introductionmentioning

confidence: 99%

Analysis on the variable junction leakage in MOS transistors due to interaction between two traps

Shin

Jeon

et al. 2015

Jpn. J. Appl. Phys.

In this paper, we analyzed the amplitude of variable junction leakage currents caused by the interaction between two interface states in MOS transistors. For the first time, an analytical equation for the ratio between the junction leakage current before and after electron capture into the slow state was derived with consideration of both the change in the capture cross-section and the electric field. Also, the correct equation for the electric field after electron trapping was derived and used. The distance between the two interface states was extracted from the equation and measurement data.