In this paper, we analyzed the amplitude of variable junction leakage currents caused by the interaction between two interface states in MOS transistors. For the first time, an analytical equation for the ratio between the junction leakage current before and after electron capture into the slow state was derived with consideration of both the change in the capture cross-section and the electric field. Also, the correct equation for the electric field after electron trapping was derived and used. The distance between the two interface states was extracted from the equation and measurement data.
This paper presents an analysis of the Random Telegraph Noise (RTN) of the Gate-Induced Drain Leakage (GIDL) of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The RTN data that was measured and analytical equations are used to extract the values of the parameters for the vertical distance of the oxide trap from the interface and of the energy level of the interface trap. These values and equations allow for the distance r between the interface trap and the oxide trap to be extracted. For the first time, the accurate field enhancement factor γ(F), which depends on the magnitude of the electric field at the Si/SiO2 interface, was used to calculate the current ratio before and after the electron trapping, and the value extracted for r is completely different depending on the enhancement factor that is used.
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