Correlation of nanostructure changes with the electrical properties of molybdenum disulfide (MoS2) as affected by sulfurization temperature

Abstract

MoS2 layers were prepared by sulfurization at temperatures ranging from 500 °C to 900 °C. Various microscopic analyses confirmed that the different sulfurization treatments altered the nanostructure of the MoS2 layers. Nanostructure alterations and enhanced crystallinity were observed at temperatures exceeding 800 °C. The electrical properties of field-effect transistor devices fabricated from the MoS2 layers were investigated in relation to sulfurization temperature. The field-effect mobility of the MoS2 layers significantly increased with rising sulfurization temperature. The change in nanostructure and the transition to a horizontally aligned microstructure at temperatures over 800 °C were explicitly correlated with the change in field-effect mobility.