Effect of La₂O₃ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks

Abstract

Diverse phenomena exist in the ionosphere caused by the presence of dusty plasma objects. These have a bearing on problems of space communication and possibly on the Earth's weather, among others. Therefore, it is very important to study them so that many questions on the subject can be answered. In this paper, the interaction of plasma waves with these objects is studied and some instrumentation to measure such interactions is proposed. In particular, the interaction of ion-sound waves (ISW) by non-soliton and soliton pulses propagating in dusty plasma is investigated. It is shown that inclusions of dusty components of the ionosphere plasma behave as resonators for non-soliton pulses, so that ISW are excited. Korteveg-de Vries (KdV) solitons practically do not resonate with the inclusions of dusty plasma. Instead, the presence of dusty plasma inclusions can lead to the presence of transverse instabilities and the eventual destruction of the KdV solitons.

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

“…This capping layer controls the effective work function of metal gates and reduces V th . However, the La 2 O 3 capping layer induces side effects on reliability problems such as the hotcarrier effect [6] and bias temperature instability [7].…”