Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
Abstract:Diverse phenomena exist in the ionosphere caused by the presence of dusty plasma objects. These have a bearing on problems of space communication and possibly on the Earth's weather, among others. Therefore, it is very important to study them so that many questions on the subject can be answered. In this paper, the interaction of plasma waves with these objects is studied and some instrumentation to measure such interactions is proposed. In particular, the interaction of ion-sound waves (ISW) by non-soliton an… Show more
“…This capping layer controls the effective work function of metal gates and reduces V th . However, the La 2 O 3 capping layer induces side effects on reliability problems such as the hotcarrier effect [6] and bias temperature instability [7].…”
“…This capping layer controls the effective work function of metal gates and reduces V th . However, the La 2 O 3 capping layer induces side effects on reliability problems such as the hotcarrier effect [6] and bias temperature instability [7].…”
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