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This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.

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idth Modulator. in B CMOS technology, was evaluated for both total dose and heavy ions effects. The heavy ions testing was performed in both static and dynamic modes. A high switch off DC/DC converter sensitivity was observed, unpredictable under static test only.

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Different part types of linear bipolar technology were irradiated in order to evaluate the ability of accelerated total dose testing to describe the tolerance at very low dose rate. On all tested types, the bias current was the most sensitive parameter. Results confirm that elevated temperature irradiation performed at high dose rate is well adapted to define the tolerance of the bias current at very low dose rate. The best accelerated test conditions correspond to a dose rate of 0.55 rad/s and irradiation temperature of 100 C. However, such a procedure is not applicable to determine the behavior of the offset parameters at low dose rate.