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This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.

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idth Modulator. in B CMOS technology, was evaluated for both total dose and heavy ions effects. The heavy ions testing was performed in both static and dynamic modes. A high switch off DC/DC converter sensitivity was observed, unpredictable under static test only.

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