SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges

Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

“…Her test results on 600 V prototypes show no significant effect of the range on the SEB safe operating area (SOA) (for ranges from 30 to 300 m). Our own results on 500 V commercial MOSFETs, on the other hand, show an influence of the ion range; they define the epilayer as the sensitive volume [9]. Recent experimental results from R. Marec [10] suggest that the criteria is a critical deposited charge in the epitaxy, the latter defining also the sensitive volume.…”

“…Experimental tests were performed on commercial 500 V MOSFETs to compare with the simulations. Results have already been presented in a previous paper [9]. The architectural parameters of the simulated MOSFET cell do not correspond exactly to those of the tested commercial device but are representative of this 500 V technology.…”

“…It is located in the intercellular region right next to the channel. This position was found by different experimental studies and numerical simulations to be among the most sensitive positions to SEB [9], [10], [14]- [16]. In addition, the choice of this position for the charge generation allows one to simulate only half of a VDMOS cell, since the influence of the adjacent half cell can be considered to be negligible.…”

Sensitive volume and triggering criteria of SEB in classic planar VDMOS

“…It is located in the intercellular region right next to the channel. This position indeed was found by different experimental studies and numerical simulations to be among the most sensitive positions to SEB [ROU93], [LUU08], [HAR07]. Besides, this position x 0 for the charge generation enables to simulate only half of a VDMOS cell since the influence of the adjacent half cell can be considered to be negligible.…”

“…Experimental tests were performed on commercial 500V MOSFETs to compare with the simulations. Results have already been presented in a previous paper [LUU08]. The architectural parameters of the simulated MOSFET cell are not precisely the one of the tested commercial device but are representative of this 500V technology.…”