2011
DOI: 10.1016/j.microrel.2011.07.023
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A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

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Cited by 4 publications
(2 citation statements)
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“…In figure 16 two typical drain current pulses recorded after bromine ion impacts are reported. The different shape, rise time and peak highlight, two well-distinct sensitive areas were the impact took place in two areas of the DUT having different sensitivity to the charge generation [33].…”
Section: Radiation Tolerance Testsmentioning
confidence: 99%
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“…In figure 16 two typical drain current pulses recorded after bromine ion impacts are reported. The different shape, rise time and peak highlight, two well-distinct sensitive areas were the impact took place in two areas of the DUT having different sensitivity to the charge generation [33].…”
Section: Radiation Tolerance Testsmentioning
confidence: 99%
“…Also for them catastrophic SEBs can occur, which are related to a spallation reaction induced by high energy particles impacts [32]. Because of them, heavy ions can be removed from the lattice and impact on the SEB sensitive area of the device [33], thus inducing its failure. Usually, the study of power MOSFETs reliability in a high dose radiation environment is performed by irradiating the samples separately with γ-rays and neutrons/protons.…”
Section: Radiation Tolerance Testsmentioning
confidence: 99%