Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

Luu, A.; Austin, Patrick; Miller, F.; Buard, N.; Carrière, T.; Poirot, P.; Gaillard, R.; Bafleur, Marise; Sarrabayrouse, G.

doi:10.1109/tns.2010.2044808

Cited by 53 publications

(20 citation statements)

References 16 publications

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“…Thus, the generated currents lead to thermal runaway and burnout. Furthermore, the peak electric field is directly proportional to the impact ionisation coefficient, which is related to the SEB sensitivity [23,24]. Hence, the reduction of the peak electric field will improve the SEB performance [25].…”

Section: Seb Simulation Results and Discussionmentioning

confidence: 99%

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Krishnamurthy

Kannan

Hussin

2020

Mater. Res. Express

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This study proposes the High-κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (SEB) mechanism. Based on the findings, the influence of alternative high permittivity gate dielectrics to silicon dioxide (SiO 2 ) in TS-UMOSFET was discussed. Furthermore, in order to improve the performance of the device, its electrical behaviour was simulated with several high-κ dielectrics including Al 2 O 3 , Si 3 N 4 and Aluminium Nitride (AlN). When heavy ions strike the sensitive areas of the device, the electric field distribution and SEB threshold values were extracted. Based on the values yielded, (AlN) was identified as a promising high-κ material to achieve SEB-hardened TS-UMOSFET compared to the other highκ dielectrics. In conclusion, with (AlN), the HK TS-UMOSFET offers a high SEB tolerance and improved electrical characteristics.

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Section: Seb Simulation Results and Discussionmentioning

confidence: 99%

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Krishnamurthy

Kannan

Hussin

2020

Mater. Res. Express

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“…This allows the establishment of a strong avalanche rate, since the ionisation coefficients are exponentially related to the electric field. The currents thus generated lead to thermal runaway and burnout [13].…”

Section: Determination Of the Sensitive Volume In Each Devicementioning

confidence: 99%

“…Overall, for these two structures, the influence of the range can be explained only by the Kirk effect: in the case where carriers increase regeneratively until their concentrations, the displacement of the electric field (see Fig. 7), with the current density flowing through the space charge region, becomes much higher than the doping concentration of the N − epitaxial region [13,23]. For short ranges, the electric field peak moves from the P-body/N-epitaxy junction to the substrate side.…”

Section: Determination Of the Sensitive Volume In Each Devicementioning

confidence: 99%

“…The test results carried out on 600 V prototypes show no significant effect of the range on the SEB safe operating area (SOA) (for ranges from 30 to 300 μm), together with Marec et al who suggest that the criteria is a critical deposited charge in the epitaxy, the latter also defining the sensitive volume [12]. On the other hand, Luu et al showed the influence of the ion range in commercial MOSFETs [13]: they define the epitaxial layer as the sensitive volume. We have also reported on the effect of the ion range on 400 V IGBTs [14].…”

Section: Introductionmentioning

confidence: 99%

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Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors

Zerarka

Austin

Morancho

et al. 2014

IET Circuits, Devices & Systems

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Power metal-oxide semiconductor field effect transistors (MOSFETs) are more and more used in atmospheric and space applications. Thus, it is essential to study the influence of the natural radiation environment on the electrical behaviour of vertical double-diffused metal-oxide semiconductor (VDMOS) and super-junction (SJ) MOSFETs. Two-dimensional numerical simulations are performed to define the sensitive volume and triggering criteria of single-event burnout (SEB) for VDMOS and SJ MOSFETs for different configurations of ionising tracks. The analysis of the results allows a better understanding of the SEB mechanism in each structure and allows the behaviour and robustness comparison for these two technologies under heavy-ion irradiation.

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“…In addition, most of the earlier work studied SEB and SEGR for vertical double-diffused MOSFET (DMOS) structures. Recently, Luu et al [14] investigated the sensitive volume and triggering criteria of SEB for vertical DMOS (VDMOS) in classic planar-type technology by using different ion penetrating depths from both the front and back sides and different ionising track ranges within the structure. Zerarka et al [15] compared the sensitive volume and triggering criteria of SEB in 600 V planar and trench insulated gate bipolar transistors (IGBTs), and showed that a planar IGBT can be 100 times more sensitive and has a smaller safe operating area (SOA) compared with a trench IGBT.…”

Section: Introductionmentioning

confidence: 99%

Simulation study of single event effects for split‐gate enhanced power U‐shape metal‐oxide semiconductor field‐effect transistor

Wang

Cao

et al. 2014

IET Power Electronics

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Power metal-oxide semiconductor field-effect transistors (MOSFETs) are increasingly used in the space probes where the environment is composed of various kinds of particles. Thus, it is essential to study the influence of the natural radiation environment on the electrical behaviour of MOSFETs in space. This study presents two-dimensional numerical simulation results, which investigates the sensitive volume, triggering criteria and characteristics of single-event burnout (SEB) and single-event gate rupture (SEGR) for the split-gate enhanced power U-shape MOSFET (SGE-UMOS). In addition, the comparison of the standard Trench-UMOS and SGE-UMOS for both SEB and SEGR simulation results is investigated. The SGE-UMOS shows an improved SEB performance than the standard Trench-UMOS with a larger safe operating area. The SGE-UMOS can also contribute to protect against SEGR compared with standard Trench-UMOS.

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Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

Abstract: This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.

Cited by 53 publications

References 16 publications

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors

Simulation study of single event effects for split‐gate enhanced power U‐shape metal‐oxide semiconductor field‐effect transistor

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