Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

Miller, F.; Luu, A.; Prud'homme, F.; Poirot, P.; Gaillard, R.; Buard, N.; Carrière, T.

doi:10.1109/tns.2006.885376

Cited by 46 publications

(20 citation statements)

References 16 publications

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“…The cuts also exhibit that no SEB are triggered below the P body, which is consistent with preceding results [16], [17].…”

Section: B Seb Sensitive Volume Mapping Of a 200 V Power Mosfets In supporting

confidence: 91%

“…2, for various values of the laser energy and three values of the Drain-Source bias . Point A is under the gate, near the channel edge, this position has already been identified as highly sensitive for other HEXFETs ( [16], [17]). The -axis of Fig.…”

Section: ) Tpa Probe Effective Lengthmentioning

confidence: 81%

“…2 for V. This point is located under the source contact which is known to be the less sensitive region of this type of devices [9], [16], [17]. No SEB signal has been observed at any depth at energies lower than 3 nJ.…”

Section: A Seb Sensitivementioning

confidence: 98%

See 2 more Smart Citations

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Darracq¹,

Mbaye²,

Azzopardi³

et al. 2012

IEEE Trans. Nucl. Sci.

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“…The cuts also exhibit that no SEB are triggered below the P body, which is consistent with preceding results [16], [17].…”

Section: B Seb Sensitive Volume Mapping Of a 200 V Power Mosfets In supporting

confidence: 91%

Section: ) Tpa Probe Effective Lengthmentioning

confidence: 81%

See 1 more Smart Citation

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Darracq¹,

Mbaye²,

Azzopardi³

et al. 2012

IEEE Trans. Nucl. Sci.

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show abstract

“…Indeed, it has already been shown that 1.06Jlm seems to be appropriate and has already been applied by F. Miller on power component [13].…”

Section: But Some Limitations Still Remainmentioning

confidence: 99%

Probing SET sensitive volumes in linear devices using focused laser beam at different wavelengths

Weulersse

Bezerra

Miller

et al. 2007

2007 9th European Conference on Radiation and Its Effects on Components and Systems

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(-a z) (1) where E(0) is the energy available on the surface of the component, u, the absorption coefficient and z the depth in the component.The energy loss along the z axis is given by (2). A. Laser interactionsLaser has proved its ability to induce SEE (Single Event Effect) [6]-[8], thanks to its capability to create localised ionising tracks in silicon.Laser interacts with silicon by photoelectric process. Hole-electron pairs are created along the beam. This interaction occurs only for wavelengths under 1.1 urn, that means for photon energy larger than silicon gap.According to the Beer-Lambert law, the laser energy available at a depth z (1) is a function of the initial energy and of the absorption coefficient u, The last is defmed for a given material and it depends strongly on the wavelength and on the doping level [3].The first part of this paper explains the laser interactions and the use of different wavelengths. A second part gives the SET results obtained at three wavelengths. At last, the calculation of sensitive depth and the comparison with heavy ion cross section curve are presented.Frontside irradiations can be done with any wavelength, the penetration depth decreasing with decreasing wavelength. But when performing frontside irradiations, the absorbing metallic layers hide some sensitive areas. Backside irradiations, on the contrary, give access to the whole component sensitive areas (see Fig. 1 ) [4] [9].Laser results are compared with heavy ion experimental data performed at DeL. Laser tests were performed with EADS laser facility. Our investigation method is based on threshold mapping which allows a detailed analysis of sensitive areas and their depth for each wavelength.."Abstract-The main objective of the work presented here is to explore the ability of laser irradiations to determine the SET sensitive depths of a linear device by using several wavelengths. Laser testing at two wavelengths allows the estimation of sensitive depths.

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“…E XCELLENT laser SEE mapping results have been achieved by various organisations using arrays of focused laser pulses to map the SEE sensitivity of microchips, including SEU and latchup in memories [1], [2], sensitive volumes in analogue devices [3], [4] and SEB sensitivity in MOSFET's [5]. Some of this work has been performed by moving the laser pulse location between each successive pair of laser pulse deliveries and waiting until the microchip and the laser beam are again at rest relative to one another before delivering the next laser pulse.…”

Section: Introductionmentioning

confidence: 99%

Improved Fine-Scale Laser Mapping of Component SEE Sensitivity

Chugg¹,

Ward²,

McIntosh³

et al. 2012

IEEE Trans. Nucl. Sci.

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Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

Cited by 46 publications

References 16 publications

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Probing SET sensitive volumes in linear devices using focused laser beam at different wavelengths

Improved Fine-Scale Laser Mapping of Component SEE Sensitivity

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