Improved Fine-Scale Laser Mapping of Component SEE Sensitivity

Chugg, A.M.; Ward, Jonathan; McIntosh, James R.; Flynn, Nathan; Duncan, P.H.; Barber, Thomas S.; Poivey, C.

doi:10.1109/tns.2012.2189582

Cited by 1 publication

(1 citation statement)

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“…Sensitivity mapping technology is a significant branch of SEE laser testing. There are plenty of studies related to this area, e.g., 2-D mapping technique [8][9][10] and 3-D mapping technique [11,12]. However, most previous research is achieved with the region of interest (ROI) size in sub-millimeter scale and few of work focuses on the ROI with the size in about one micron scale which is even smaller than the spot size of the laser beam.…”

Section: Introductionmentioning

confidence: 99%

Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research

Belev

Tian

et al. 2020

Applied Sciences

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Research on single event effects (SEEs) is significant to the design and manufacture of modern electronic devices. By applying two photon absorption (TPA) ultra-fast pulsed lasers, extra electron-hole pairs (EHPs) are generated in a desired location on a chip, simulating the process that could occur in the circuit by energetic particles. In this study, a SEE sensitivity mapping system is described which uses this method to generate real-time sensitivity maps for various electronic devices. The system hardware includes an attenuator to control the energy, a Pockels cell as a fast-optical switcher and a mirror–mirror module to project the laser beam into a certain location. The system software developed for this application controls the laser system, automatically generates sensitivity maps, communicates with the testing devices and logs the SEE results. The two main features of this laser mapping system are: high scanning velocity for large area scanning (about 1 × 1 mm) and high spatial resolution for small area scanning (about 1 × 1 μm). To verify this mapping system, sensitivity maps were generated for static random access memory (SRAM) built with 65 nm technology and for commercial operational amplifiers (op-amps). The achieved sensitivity maps were compared with circuitry analysis and laser testing results, confirming this mapping system to be effective.

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